Hostname: page-component-669899f699-8p65j Total loading time: 0 Render date: 2025-05-05T16:23:51.939Z Has data issue: false hasContentIssue false
  • English
  • Français

EPR Study Of Defect Formation In H Implanted And Annealed CZ Si

Published online by Cambridge University Press:  15 February 2011

B. Pivac ,
B. Rakvin ,
F. Corni ,
R. Tonini  and
G. Ottaviani
B. Pivac
Affiliation:
R. Boskovic Institute, P.O.Box 1016, HR-10000 Zagreb, Croatia
B. Rakvin
Affiliation:
R. Boskovic Institute, P.O.Box 1016, HR-10000 Zagreb, Croatia
F. Corni
Affiliation:
Dipartimento di Fisica, Universita di Modena, 1–41100 Modena MO, Italy
R. Tonini
Affiliation:
Dipartimento di Fisica, Universita di Modena, 1–41100 Modena MO, Italy
G. Ottaviani
Affiliation:
Dipartimento di Fisica, Universita di Modena, 1–41100 Modena MO, Italy
Get access

Abstract

Structural defects produced in single crystal silicon after hydrogen ion implantation were studied by electron paramagnetic resonance spectroscopy. Samples implanted at 77K show the presence of vacancy clusters that serve as precursors for nanoblister formation upon subsequent thermal treatment. Evolution of vacancy clusters at various stages of thermal annealing show the influence of implanted hydrogen redistribution that passivates the paramagnetic activity in the intermediate temparature range. At still higher temperatures hydrogen outdifluses from the bulk activating remaining structural defects. At these temperatures, formed vacancy clusters gettered oxygen present in the bulk forming, therefore, VxOy complexes. Finally, at temperatures above 700°C vacancy clusters disintegrate completely.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 293
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. Corbett, J.W., Karius, J.K., and Tan, T.Y., Nucl. Instrum. Methods 182&183, 457 (1981).Google Scholar
2. Brown, W.R., in Beam-Solid Interactions and Phase Transformations, edited by Kurz, H., Olsen, G.L., and Poate, J.M., (Mater. Res. Soc. Proc. 51, Pittsburgh, PA 1985), p. 53–70.Google Scholar
3. Thornas, P.A., Brodsky, M.H., Kaplan, D., and Lepine, D., Phys. Rev., B 18, 3059 (1978).Google Scholar
4. Pearton, S.J., Corbett, J.W., and Shi, T.S., Appl. Phys. A 43, 153 (1987).Google Scholar
5. Stein, H.J., J. Electron. Mater. 4, 159 (1975).Google Scholar
6. Shi, T.S., Sahu, S.N., Oehrlein, G.S., Hiraki, A., and Corbett, J.W., Phys. Stat. Sol. (a) 74, 329 (1982).Google Scholar
7. Luetgemeier, H. and Schnitzke, K., Phys. Lett. 25 A, 232 (1967)Google Scholar
8. Daly, D.F. and Pickar, K.A., Appl. Phys. Lett. 15, 267 (1969).Google Scholar
9. Kleinhenz, R.L., Lee, Y.H., Singh, V.A.. Mooney, P.M., Jaworowski, A., Roth, L.M., Corelli, J.C., and Corbett, J.W., in Defects and Radiation Effects in Semiconductors, Conf. Ser. No 46 (Inst. Phys. London, 1979) p. 200.Google Scholar
10. Gorelkinskii, Yu. V. and Nevinnyi, N.N., Physica B, 170, 155 (1991).Google Scholar
11. Cerofolini, G.F., Meda, L., Volpones, C., Ottaviani, G., Fayette, J. De, Dierckx, R., Donelli, D., Orlandini, M., Anderle, M., Canteri, R., Claeys, C., and Vanhellemont, J., Phys. Rev. B 41, 12607 (1990).Google Scholar
12. Meda, L., Cerofolini, G.F., Ottaviani, G., Tonini, R., Coni, F., Balboni, R., Anderle, M., Canteri, R., and Dierckx, R., Physica B 170, 259 (1991).Google Scholar
13. Meda, L., Cerofolini, G.F., Bresolin, C., Diercks, R., Donelli, D., Orlandini, M., Anderle, M., Canteri, R., Ottaviani, G., Tonini, R., Claeys, C, Vanhellemont, J., Pizzini, S., and Farina, S., in Semiconductor Silicon 1990, edited by Huff, H.R., Barraclough, K.G. and Chikawa, J. (Electrochem. Soc., Pennington, NJ, 1990), vol.90/7, p. 456.Google Scholar
14. Brusa, R.S., Naia, M. Duarte, Zecca, A., Nobili, C., Ottaviani, G., Tonini, R., and A. Dupasquier, Phys. Rev. B 49, 7271 (1994).Google Scholar
15. Cerofolini, G.F., Balboni, R., Bisero, D., Corni, F., Frabboni, S., Ottaviani, G., Tonini, R., Brusa, R.S., Zecca, A., Ceschini, M., Giebel, G., and Pavesi, L., Phys. Stat. Sol. (a) 150, 539 (1995).Google Scholar
16. Lee, Y.-H. and Corbett, J.W., Phys. Rev. B, 13, 2653 (1976).Google Scholar