Hostname: page-component-55f67697df-sqlfs Total loading time: 0 Render date: 2025-05-10T01:12:43.768Z Has data issue: false hasContentIssue false
  • English
  • Français

Electron Transport in InAs/AlSb Quantum Wells: Interface Sequencing Effects

Published online by Cambridge University Press:  28 February 2011

Gary Tuttle ,
Herbert Kroemer  and
John H. English
Gary Tuttle
Affiliation:
Department of Electrical and Computer Engineering University of California, Santa Barbara, California 93106
Herbert Kroemer
Affiliation:
Department of Electrical and Computer Engineering University of California, Santa Barbara, California 93106
John H. English
Affiliation:
Department of Electrical and Computer Engineering University of California, Santa Barbara, California 93106
Get access

Abstract

We present data on electron transport in AlSb/InAs/AlSb quantum wells grown by molecular beam epitaxy. Because both anion and cation change across an InAs/Alsb interface, it is possible to grow such wells with two different types of interfaces, one with an InSb-like bond configuration, the other AlAs-like. Electron mobility and concentration were found to depend very strongly on the manner in which the quantum well's interfaces were grown, with high mobilities seen only if the bottom interface is InSb-like. An As-on-Al sites antisite defect model is postulated for bottom AlAs-like interfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 415
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1 Chang, C. A., Chang, L. L., Mendez, E. E., Christie, M. S., and Esaki, L., J. Vac. Sci. Technol. B 2, 214 (1984).Google Scholar
2 Tuttle, G., Kroemer, H., and English, J. H., J. Appl. Phys., to be published.Google Scholar
3 Munekata, H., Esaki, L., and Chang, L. L., J. Vac. Sci. Technol. B 5, 809 (1987).Google Scholar
4 Vandenberg, J. M., Panish, M. B., Temkin, H., and Hamm, R. A., Appl. Phys. Lett 53, 1920 (1988).Google Scholar
5 Griffiths, G., Mohammed, K., Subbanna, S., Kroemer, H., and Merz, J. L., Appl. Phys. Lett. 43, 1059 (1983).Google Scholar
6 Liu, T. Y. and Petroff, P. M., unpublished.Google Scholar
7 Schaffer, W. J., Lind, M. D., Kowalczyk, S. P., and Grant, R. W., J. Vac. Sci. Technol. B 1, 688 (1983).Google Scholar
8 Hancock, B. R. and Kroemer, H., J. Appl. Phys. 55, 4239 (1984).CrossRefGoogle Scholar
9 Newstead, S. M., Kubiak, R. A. A., and Parker, E. H. C., J. Cryst. Growth 81, 49 (1988).Google Scholar