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Electromigration Failure in Thin Film Conductors Possessing a Near-Bamboo Structure

Published online by Cambridge University Press:  22 February 2011

J.R. Lloyd
J.R. Lloyd*
Affiliation:
Digital Equipment Corporation, Hudson MA 01749-2895
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Abstract

Electromigration failure in a near bamboo structure is investigated theoretically. Assuming that the diffusion path is interfacial, a flux divergence can be predicted based on the stress gradient induced by grain boundary electromigration in a sub Blech Length grain cluster. A possible explanation for the recently observed “trans-granular” voids is proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 338: Symposium – Materials Reliability in Microelectronics IV , 1994 , 367
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1) Cho, J. and Thompson, C.V., Appl. Phys. Lett. 54, 2577 (1989)Google Scholar
2) Longworth, H.P. and Thompson, C.V., Appl. Phys. Lett. 60, 2219 (1992)Google Scholar
3) Kinsbron, E., Appl. Phys. Lett. 36, 968 (1980)Google Scholar
4) Sanchez, J.E. Jr, Kraft, O., and Arzt, E., Appl. Phys. Lett. 61, 3121 (1992)Google Scholar
5) Kim, C., Selitser, S.I. and Morris, J.W. Jr, Mat. Res. Soc. Symp. Proc. Vol. 309, 127 (1993)Google Scholar
6) Atakov, E.M., Shepela, A. and Miner, B., Mat. Res. Soc. Symp. Proc. Vol. 309, 410 (1993)Google Scholar
7) Blech, I.A., J. Appl. Phys. 47, 1203 (1976) and othersGoogle Scholar
8) Shatzkes, M. and Lloyd, J.R., J. Appl. Phys. 59, 3890 (1986)Google Scholar
9) Lloyd, J.R., Appl. Phys. Lett. 57, 1167 (1990)Google Scholar
10) Atakov, E.M., Clement, J.J., and Miner, B., Mat. Res. Soc. Symp. Proc. Vol. 309, 133 (1993)Google Scholar
11) Lloyd, J.R., Sullivan, M.J., Jozwiak, J.L. and Murphy, R.J., Appl. Phys. Lett. 44, 68 (1984)Google Scholar
12) Sanchez, J.E. Jr, McKnelley, L. T and Morris, J.W. Jr, J. Electron. Mater., 11, 1213 (1990)Google Scholar
13) Hu, C.-K., Small, M.B., Rodbell, K.P., Stanis, C., Mazzeo, N., Blauner, P. and Rosenberg, R., Mat. Res. Soc. Proc. Vol. 309, 111 (1993)Google Scholar
14) Dreyer, M. L., Fu, K.Y. and Varker, C.J., J. Appl. Phys. 73, 4864 (1993)Google Scholar
15) Black, J.R., Proc. 6th Ann. Rel. Phys. Symp., 148 (1966)Google Scholar