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Electrical Characterization of Ion Imiplanted, Thermally Annealed TiN Films Acting as Diffusion Barriers on Shallow Junction Silicon Devices

Published online by Cambridge University Press:  25 February 2011

A. Armigliato ,
M. Finetti ,
E. Gabilli ,
S. Guerri ,
P. Ostoja ,
G. Sabato  and
A. Scorzoni
A. Armigliato
Affiliation:
CNR-Ist.LAMEL, Via Castagnoli, 1 - Bologna (ITALY)
M. Finetti
Affiliation:
CNR-Ist.LAMEL, Via Castagnoli, 1 - Bologna (ITALY)
E. Gabilli
Affiliation:
CNR-Ist.LAMEL, Via Castagnoli, 1 - Bologna (ITALY)
S. Guerri
Affiliation:
CNR-Ist.LAMEL, Via Castagnoli, 1 - Bologna (ITALY)
P. Ostoja
Affiliation:
CNR-Ist.LAMEL, Via Castagnoli, 1 - Bologna (ITALY)
G. Sabato
Affiliation:
CNR-Ist.LAMEL, Via Castagnoli, 1 - Bologna (ITALY)
A. Scorzoni
Affiliation:
CNR-Ist.LAMEL, Via Castagnoli, 1 - Bologna (ITALY)
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Abstract

TiN films prepared by implantation onto evaporated Ti layers are tested as diffusion barriers in contact with a thick Al overlayer. Both the TiN/Al and TiSi2/TiN/Al contact structures are evaluated, after thermal treatments up to 600 C, on shallow junction diodes and four terminal resistor test patterns for contact resistance measurements. It is shown that, upon annealing at 600 C, the TiSi2/TiN/Al contact system still exhibits excellent electrical performances. The degradation is found to depend on TiSi2 thickness and contact area.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 45: Symposium A – Ion Beam Processes in Advanced Electronic Materials and Device Technology , 1985 , 183
Copyright
Copyright © Materials Research Society 1985

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References

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