Hostname: page-component-55f67697df-jr75m Total loading time: 0 Render date: 2025-05-12T00:53:43.164Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of Hydrogen Atoms on Passivation and Growth of Microcrystalline Si

Published online by Cambridge University Press:  21 February 2011

Toshimichi Ito ,
Tatsuro Yasumatsu ,
Hirokuni Watabe ,
Motohiro Iwami  and
Akio Hiraki
Toshimichi Ito
Affiliation:
Department of Electrical Engineering, Osaka University, Suita, Osaka 565, Japan
Tatsuro Yasumatsu
Affiliation:
Department of Electrical Engineering, Osaka University, Suita, Osaka 565, Japan
Hirokuni Watabe
Affiliation:
Matsushita Electric Industrial Co. Ltd., Shiromi, Osaka, Osaka., Japan
Motohiro Iwami
Affiliation:
Research Institute for Surface Science, Faculty of Science, Okayama University, Okayama, Okayama., Japan
Akio Hiraki
Affiliation:
Department of Electrical Engineering, Osaka University, Suita, Osaka 565, Japan
Get access

Abstract

Effects of hydrogen atoms bonded to silicon atoms on microcrystalline surfaces in a μc-Si:H and anodized porous silicon have been investigated using infrared spectroscopic technique and a semi-empirical molecular-orbital calculation (AM1 method). Experimental results on thermal stability of the Si-H bonds and oxidation of H-covered Si can be explained consistently in terms of system total energies and heats of formation of various clusters constructed by 13–18 Si and 18–24 H atoms (with an additional 0 atom). Possible role of H on the growth of μ c-Si:H is discussed in relation to stable Si-H bonds.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 164: Symposium H – Materials Issues in Microcrystalline Semiconductors , 1989 , 205
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. Lucovsky, G., J.Non-cryst. Solids 76, 173(1985) and references therein.Google Scholar
2. Bomchil, G., Herino, R. and Barla, K., in MRS Europe 1985,(1986), pp. 463 and references therein.Google Scholar
3. Lucovsky, G., J.Vac.Sci.Technol. 16, 1225(1979).Google Scholar
4. Matsuda, A., Yoshida, T., Yamasaki, S. and Tanaka, K., Jpn.J.Appl. Phys. 20, L439(1981).Google Scholar
5. Pollard, W.B. and Lucovsky, G., Phys.Rev. B26, 3172(1982).Google Scholar
6. Matsuda, A. and Tanaka, K., J.Appl.Phys. 60, 2351(1986).Google Scholar
7. Satoh, T. and Hiraki, A., Jpn.J.Appl.Phys. 24, L491(1985).Google Scholar
8. Hiraki, A., in Structure and Bonding in Noncrystalline Solids (Plenum, 1986) pp. 219–236 and references therein.Google Scholar
9. Ito, T., Kato, Y. and Hiraki, A., in The Structure of Surfaces, edited by Veen, J.F. van der and Hove, M.A. Van (Springer-Verlag, Berlin, 1988) pp. 378–383.Google Scholar
10. Kato, Y., Ito, T. and Hiraki, A., Jpn.J.Appl.Phys. 27, L1466(1988).Google Scholar
11. Dewar, M.J.S., Zoebisch, E.G., Hearly, E.F. and Stewart, J.J.P., J. Amer.Chem.Soc. 107, 3902(1985).Google Scholar
12. Dewar, M.J.S. and Jie, C., Organometallics 6, 1486(1987).Google Scholar
13. Dewar, M.J.S. and Thiel, W., J.Amer.Chem.Soc. 99, 4899(1977).Google Scholar