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The Effect of SiGe Barriers on the Thermal Stability of Highly B-Doped Si Surface Layers

Published online by Cambridge University Press:  11 February 2011

Phillip E. Thompson ,
Joe Bennett ,
Robert Crosby  and
Mark E. Twigg
Phillip E. Thompson
Affiliation:
Code 6812, Naval Research Laboratory, Washington, DC 20375, U.S.A.
Joe Bennett
Affiliation:
International SEMATECH, Austin TX 78741, U.S.A.
Robert Crosby
Affiliation:
Code 6812, Naval Research Laboratory, Washington, DC 20375, U.S.A.
Mark E. Twigg
Affiliation:
Code 6812, Naval Research Laboratory, Washington, DC 20375, U.S.A.
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Abstract

We have investigated the use of low-temperature (320 °C) molecular-beam epitaxy (MBE) to form highly conductive, p+, ultra-shallow layers in Si. Although the as-grown B-doped Si is electrically active, in a practical application the doped layers may be exposed to high temperature during post-growth device processing. To minimize the B diffusion, we investigated the use of SiGe diffusion barrier layers. In this work we demonstrate there is less B redistribution with the SiGe diffusion barriers. The use of SiGe diffusion barriers may prove to be critical in the activation of B implants for the formation of ultra-shallow junctions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 745: Symposium N – Novel Materials and Processes for Advanced CMOS , 2002 , N4.1
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

[1] The International Technology Roadmap for Semiconductors, 1999 ed. [http://public.itrs.net].Google Scholar
[2] Collart, E. J. H., Weemers, K., Gravesteijn, D. J., and Van Berkum, J. G. M., J. Vac. Sci. Tech. B 16, 280 (1998).Google Scholar
[3] Matyi, R. J., Felch, S. B., Lee, B. S., Strathman, M. R., Keenan, J. A., Guo, Y., and Wang, L., J. Vac. Sci. Tech. B 16, 435 (1998).Google Scholar
[4] Agarwal, A., Eaglesham, D. J., Gossmann, H.-J., Pelaz, L., Herner, S. B., Jacobson, D. C., Haynes, T. E., Erokhin, Y., and Simonton, R., IEDM Technol. Dig. 97, 467 (1997).Google Scholar
[5] Agarwal, A., Gossmann, H.-J., and Eaglesham, D. J., Appl. Phys. Lett. 74, 2331 (1999).Google Scholar
[6] Thompson, P. E. and Bennett, Joe, Appl. Phys. Lett. 77 2569 (2000).Google Scholar
[7] Thompson, P. and Bennett, J., Materials Science and Engineering B89 211 (2002).Google Scholar
[8] Thompson, P. and Bennett, J., J. Appl. Phys.Google Scholar
[9] Eaglesham, D. J., Gossmann, H. -J., and Cerullo, M., Phys. Rev. Lett. 65, 1227 (1990).Google Scholar
[10] Sasaki, Y., Itoh, K., Inoue, E., Kishi, S., and Mitsuishi, T., Solid-State Electron. 31, 5 (1988).Google Scholar
[11] Fiory, A. T. and Bourdelle, K. K., J. Electron. Mater. 28, 1345 (1999).Google Scholar