Hostname: page-component-669899f699-cf6xr Total loading time: 0 Render date: 2025-05-05T18:32:03.187Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect Of Pressure On Boron Diffusion In Silicon

Published online by Cambridge University Press:  15 February 2011

Yuechao Zhao ,
Michael J. Aziz ,
Salman Mitha  and
David Schiferl
Yuechao Zhao
Affiliation:
Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138
Michael J. Aziz
Affiliation:
Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138
Salman Mitha
Affiliation:
Charles Evans and Associates, Redwood City, CA 94063
David Schiferl
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545
Get access

Abstract

We are studying the effect of pressure on boron diffusion in silicon in order to better understand the nature of the point defects responsible for diffusion. Si homoepitaxial layers deltadoped with boron were grown using molecular beam epitaxy. Diffusion anneals were performed in a high temperature diamond anvil cell using fluid argon as a pressure medium. Diffusivities were deduced from B concentration-depth profiles measured with using secondary ion mass spectrometry. Preliminary results indicate that pressure enhances B diffusion in Si at 850 °C, characterized by an average activation volume of -0.125±0.02 times the atomic volume, and thus appear consistent with an interstitial-based diffusion mechanism. Results are compared with previous hydrostatic-pressure studies, with results in biaxially strained films, and with atomistic calculations of activation volumes for self diffusion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 305
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1 Fahey, P M., Griffin, P.B. and Plummer, J.D., Rev. Mod. Phys. 61, 289 (1989).Google Scholar
2 Gossmann, H.-J., in Delta Doping of Semiconductors, edited by Schubert, E.F. (Cambridge University Press, Cambridge, U.K., 1996), p. 253.Google Scholar
3 Aziz, M.J., submitted to Appl. Phys. Lett.Google Scholar
4 Stolk, P.A., Eaglesham, D.J., Gossmann, H.-J. and Poate, J.M., Appl. Phys. Lett. 66, 1370 (1994).Google Scholar
5 Mitha, S., Aziz, M.J., Schiferl, D. and Poker, D.B., Appl. Phys. Lett. 69, 922 (1996).Google Scholar
6 Hess, N.J. and Schiferl, D., J. Appl. Phys. 71, 2082 (1992).Google Scholar
7 Zhao, Y.C., Carter, W.B., Theiss, S.D., Mitha, S., Aziz, M.J. and Schiferl, D., (unpublished).Google Scholar
8 Wu, D.T., in Crucial Issues in Semiconductor Materials and Processing Technologies, edited by Coffa, S., Priolo, F., Rimini, E. and Poate, J.M. (Kluwer, London, 1992), p. 403.Google Scholar
9 Gossmann, H.-J. (private communication). The Bell Labs anneal took place in a furnace in argon of 99.95% purity flowing at 1.5 liters/minute at 850 °C for 45 minutes. The temperature was calibrated using solid phase epitaxial growth rates and using a thermocouple attached to the silicon and is believed to be accurate to within ± 100. The furnace and procedure are identical to those reported in H.-J. Gossmann, C.S. Rafferty, F.C. Unterwald and T. Boone, Appl. Phys. Lett. 67, 1558 (1995).Google Scholar
10 Fair, R.B., in Impurity Doping Process in Silicon, edited by Wang, F.F.Y. (North-Holland, Amsterdam, 1981), Chapter 7.Google Scholar
11 Södervall, U., Friesel, M. and Lodding, A., J. Chem. Soc. Faraday Trans. 86, 1293 (1990).Google Scholar
12 Antonelli, A. and Bernholc, J., Phys. Rev. B 40, 10643 (1989).Google Scholar
13 Kuo, P., Hoyt, J.L., Gibbons, J.F., Turner, J.E. and Lefforge, D., Appl. Phys. Lett. 66, 580 (1995).Google Scholar
14 Cowern, N.E.B., Kersten, W.J., Kruif, R.C.M. de, Berkum, J.G.M. van, Boer, W.B. de, Gravesteijn, D.J. and Bulle-Liewma, C.W.T., in Proc. 4th Int. Symp. on Process Physics and Modeling in Semiconductor Devices, eds. Srinivasan, G.R., Murthy, C.S., and Dunham, S.T., Electrochem. Soc. Proc. Vol.96–4 (Electrochem. Soc., Pennington, NJ, 1996).Google Scholar
15 Tang, M., Colombo, L., Zhu, J. and Rubia, T. Diaz de la, submitted to Phys. Rev. B.Google Scholar