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Effect of Film Composition on Low Temperature Processing of SBT Deposited by MOCVD

Published online by Cambridge University Press:  10 February 2011

Harald Bachhofer ,
Frank Hintermaier ,
Manfred Hauf ,
Oswald Spindler ,
Thomas Haneder ,
Christine Dehm ,
Henning von Philipsborn  and
Rainer Waser
Harald Bachhofer
Affiliation:
Infineon Technologies AG, Memory Products, Otto-Hahn-Ring 6, 81730 Munich, Germany University of Regensburg, Physics Department, 93040 Regensburg, Germany
Frank Hintermaier
Affiliation:
Infineon Technologies AG, Memory Products, Otto-Hahn-Ring 6, 81730 Munich, Germany
Manfred Hauf
Affiliation:
Infineon Technologies AG, Memory Products, Otto-Hahn-Ring 6, 81730 Munich, Germany
Oswald Spindler
Affiliation:
Infineon Technologies AG, Memory Products, Otto-Hahn-Ring 6, 81730 Munich, Germany
Thomas Haneder
Affiliation:
Infineon Technologies AG, Memory Products, Otto-Hahn-Ring 6, 81730 Munich, Germany University of Regensburg, Physics Department, 93040 Regensburg, Germany
Christine Dehm
Affiliation:
Infineon Technologies AG, Memory Products, Otto-Hahn-Ring 6, 81730 Munich, Germany
Henning von Philipsborn
Affiliation:
University of Regensburg, Physics Department, 93040 Regensburg, Germany
Rainer Waser
Affiliation:
IFF, Forschungszentrum Juelich and RWTH Aachen, 52070 Aachen, Germany
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Abstract

Bi-layered ferroelectric strontium bismuth tantalate (SBT) thin films of various film compositions were deposited on Pt/Ti/SiO2/Si substrates by metalorganic chemical vapor deposition (MOCVD) and crystallized at 700°C in oxygen ambient. Phase transition, orientation, second phases and remanent polarization were investigated with respect to film stoichiometry. X-ray diffraction (XRD) measurements revealed that excess Bi lowers the transition temperature from fluorite-type to ferroelectric phase. However, SBT films with Bi-excess of 15% or higher exhibit pronounced Bi-loss during crystallization and a decrease in the relative intensity of the (200) peak. Highly Sr-deficient films are not fully crystallized but support pyrochlore formation. The maximum remanent polarization is obtained at a Sr-deficiency of 15–25% and a Bi-excess of 10% (0.85/2.20/2.00).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 596: Symposium Y – Ferroelectric Thin Films VIII , 1999 , 149
Copyright
Copyright © Materials Research Society 2000

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