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Dislocation Velocities In Gesi Bulk Alloys

Published online by Cambridge University Press:  15 February 2011

I. Yonenaga
I. Yonenaga*
Affiliation:
Institute for Materials Research, Tohoku University, Sendai 980-77, Japan
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Abstract

The mechanical strength and dislocation velocities in single crystal Ge1−xSix alloys grown by the Czochralski method were investigated by compressive deformation and by the etch pit technique, respectively. In the temperature range 450 – 700 °C and the stress range 3 – 20 MPa, the dislocation velocity in the GeSi alloys with x = 0.004 – 0.053 decreases monotonously with an increase in the Si content, reaching about a quarter of that in Ge at x = 0.053, and can be expressed as a function of the stress and the temperature. The yield stress of the GeSi alloy increases with increasing Si content from x = 0 to 0.4 and is temperature-insensitive at high temperatures, showing that the flow stress of alloy has an athermal component which is absent in elemental or compound semiconductors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 337
Copyright
Copyright © Materials Research Society 1997

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