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Determination of the Threshold Energy of Noble Gas Defects in Silicon Created by Ion Beam Etching

Published online by Cambridge University Press:  25 February 2011

W. D. Sawyer  and
J. Weber
W. D. Sawyer
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, 7000 Stuttgart 80, Federal Republic of Germany
J. Weber
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, 7000 Stuttgart 80, Federal Republic of Germany
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Abstract

Using photoluminescence we investigate defects introduced into silicon by ion beam etching. The luminescence spectra show the presence of various defects known from radiation damage studies. Ion-beam milling with different noble gas ions produces a family of defects which gives rise to almost identical photoluminescence spectra. The intensity of the Ar noble gas defect luminescence is studied for different ion-beam energies (200–2000eV) and crystal orientations. The threshold energy to create this defect leads to a model of the defect structure.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 76: Symposium C – Science and Technology of Microfabrication , 1986 , 197
Copyright
Copyright © Materials Research Society 1987

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References

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