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Design and Fabrication of GaN-based Permeable-Base Transistors

Published online by Cambridge University Press:  01 February 2011

Jasper S. Cabalu ,
Liberty L. Gunter ,
Ian Friel ,
Anirban Bhattacharyya ,
Yuri Fedyunin ,
Kanin Chu ,
Enrico Bellotti ,
Charles Eddy  and
Theodore D. Moustakas
Jasper S. Cabalu
Affiliation:
Department of Electrical and Computer Engineering, Boston University, Boston, MA, U.S.A.
Liberty L. Gunter
Affiliation:
Department of Physics, Boston University, Boston, MA, U.S.A.
Ian Friel
Affiliation:
Department of Physics, Boston University, Boston, MA, U.S.A.
Anirban Bhattacharyya
Affiliation:
Department of Electrical and Computer Engineering, Boston University, Boston, MA, U.S.A.
Yuri Fedyunin
Affiliation:
Department of Electrical and Computer Engineering, Boston University, Boston, MA, U.S.A.
Kanin Chu
Affiliation:
BAE Systems, Nashua, NH, U.S.A.
Enrico Bellotti
Affiliation:
Department of Electrical and Computer Engineering, Boston University, Boston, MA, U.S.A.
Charles Eddy
Affiliation:
Department of Electrical and Computer Engineering, Boston University, Boston, MA, U.S.A.
Theodore D. Moustakas
Affiliation:
Department of Electrical and Computer Engineering, Boston University, Boston, MA, U.S.A.
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Abstract

In this work, we present the first successful fabrication of an etched grooved GaN-based permeable-base transistor structure. Growth of the device structures was done by Molecular Beam Epitaxy (MBE) on thick HVPE GaN quasi-substrates. The fabrication process took advantage of isolations pads via He implantation and SiN deposition, as well as submicron ICP etching of collector fingers patterned via e-beam lithography. SEM of the finished devices shows smooth etched finger structures and base layer surface with finger sidewall angles of ∼85° for 1:1 and 1:3 finger spacing. Specific contact resistivities of ∼ 3 × 10-6 Ω•cm2 for the ohmic contacts were achieved with Ti/Al/Ni/Au metallization scheme. Preliminary DC testing of the devices show a collector current IC = 140 mA/mm at VCE of 5V and VBE of +0.5V. The maximum transconductance gm is ∼111 mS/mm in the measured collector-emitter bias range. These values are comparable, within the measurement tolerance, to physics-based modeling results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y10.21
Copyright
Copyright © Materials Research Society 2004

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References

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