Hostname: page-component-55f67697df-2mk96 Total loading time: 0 Render date: 2025-05-09T22:34:16.120Z Has data issue: false hasContentIssue false
  • English
  • Français

Defect Distribution and Defect Kinetics in Undoped and Boron-Doped A-Si:H Investigated by Modulated Photocurrents

Published online by Cambridge University Press:  25 February 2011

G. Schumm  and
G. H. Bauer
G. Schumm
Affiliation:
Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, D-7000 Stuttgart 80, Federal Republik of Germany
G. H. Bauer
Affiliation:
Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, D-7000 Stuttgart 80, Federal Republik of Germany
Get access

Abstract

Gap state profiles in a-Si:H around the Fermi energy have been determined by phase shift analysis of modulated photocurrents. Measurements on different samples in various light-soaked and annealed states show a general strong correlation of the defect structure with the Fermi level position, with a minimum in the DOS at Ef and a peak above Ef. A model of the defect structure involving a peak of D+ states above Ef is outlined that accounts for the observed correlations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 327
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

[1] Staebler, D.L. and Wronski, C.R., Appl.Pys.Lett. 31, 292 (1977).Google Scholar
[2] Schumm, G. and Bauer, G.H., Phys.Rev.B 39 (15 March, 1989).Google Scholar
[3] Schumm, G. et al., MRS Symp.Proc. 118, 543 (1988).Google Scholar
[4] Schumm, G., Nitsch, K. and Bauer, G.H., Phil.Mag.B 58 411 (1988).CrossRefGoogle Scholar
[5] Cohen, J.D. and Lang, D.V., Phys.Rev.B 25, 5321 (1982).Google Scholar
[6] Beyer, W. and Overhof, H. in Semiconductors and Semimetals 21C edited by Pankove, J.I. (Acad. Press, Orlando 1984), p.257.Google Scholar
[7] Kocka, J. et al. in 8th. EC PV. Solar Energy Conf. Proc. edited by Solomon, , Equer, B., Helm, P. (Kluwer Acad. Publ., Dordrecht 1988) p.724.Google Scholar
[8] Bar-Yam, Y., Adler, D., Joannopoulos, J.D., Phys.Rev.Lett. 57, 467 (1986).CrossRefGoogle Scholar
[9] Spear, W.E., Hourd, A.C., Kinmond, S., J.Non-Cryst.Sol. 77&78, 607 (1985).Google Scholar
[10] Gelatos, A.V. and Cohen, J.D., J.Non-Cryst.Solids 97&98, 71 (1987).Google Scholar
[11] Pierz, K. et al., J.Non-Cryst.Solids 97&98, 63 (1987).Google Scholar