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Damage Accumulation and Annealing in Ion Irradiated Silicon

Published online by Cambridge University Press:  26 February 2011

F. Priolo ,
A. Battaglia ,
C. Spinella  and
E. Rimini
F. Priolo
Affiliation:
Dipartimento di Fisica, 57 Corso Italia, 195129, Catania, Italy
A. Battaglia
Affiliation:
IMETEM-CNR, 57 Corso Italia, 195129, Catania, Italy
C. Spinella
Affiliation:
IMETEM-CNR, 57 Corso Italia, 195129, Catania, Italy
E. Rimini
Affiliation:
Dipartimento di Fisica, 57 Corso Italia, 195129, Catania, Italy
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Abstract

The evolution of pre-existing damage structures in Si under high energy ion irradiation is discussed. Different initial morphologies are investigated: a sample partially pre-damaged with heavy ions and a sample partially pre-damaged with light ions are compared within them and with an undamaged single crystal. It is shown that ion irradiation can produce either damage accumulation, in the form of amorphous regions, or damage annealing depending on the pre-existing damage morphology, on the substrate temperature, and on the doping content in the irradiated layer. These data are discussed and interpreted on the basis of the existing models on ion induced amorphization and crystallization.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 201: Symposium A – Surface Chemistry and Beam-Solid Interactions , 1990 , 345
Copyright
Copyright © Materials Research Society 1991

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