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Cross-Sectional TEM Investigation of Low-Temperature Epitaxial Silicon Films Grown by Ultra-Low Pressure CVD

Published online by Cambridge University Press:  28 February 2011

T. R. Yew ,
J. H. Comfort ,
L. M. Garverick ,
W. R. Burger  and
R. Reif
T. R. Yew
Affiliation:
Department of Materials Science and Engineering, Cambridge, MA 02139
J. H. Comfort
Affiliation:
Department of Chemical Engineering, Cambridge, MA 02139
L. M. Garverick
Affiliation:
Department of Materials Science and Engineering, Cambridge, MA 02139
W. R. Burger
Affiliation:
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139
R. Reif
Affiliation:
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

In this paper, cross-sectional TEM is used to investigate the quality of silicon epitaxial films grown by ultra-low pressure chemical vapor deposition at 750°C. The dislocation density and epi.- substrate interface width were investigated for different predeposition Argon sputter cleaning condltions. Epitaxial films with dislocation densities of less than 10 cm−2 and interfacial width of about 13 Å were obtained.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 75: Symposium B – Photon, Beam, and Plasma Stimulated Chemical Processes at Surfaces , 1986 , 705
Copyright
Copyright © Materials Research Society 1987

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References

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