Hostname: page-component-669899f699-7tmb6 Total loading time: 0 Render date: 2025-05-01T17:36:29.701Z Has data issue: false hasContentIssue false
  • English
  • Français

The core Structure Of Pure Edge Threading Dislocations In Gan Layers Grown On [0001] SiC Or Sapphire By Mbe

Published online by Cambridge University Press:  10 February 2011

P. Ruterana ,
V. Potin  and
G. Nouet
P. Ruterana
Affiliation:
Laboratoire d'Etudes et de Recherches sur les Matériaux, Institut des Sciences de la Mati~re et du Rayonnement, UPRESA-CNRS 6004, 6 Bd du Mardchal Juin 14050 Caen Cedex France, [email protected]
V. Potin
Affiliation:
Laboratoire d'Etudes et de Recherches sur les Matériaux, Institut des Sciences de la Mati~re et du Rayonnement, UPRESA-CNRS 6004, 6 Bd du Mardchal Juin 14050 Caen Cedex France, [email protected]
G. Nouet
Affiliation:
Laboratoire d'Etudes et de Recherches sur les Matériaux, Institut des Sciences de la Mati~re et du Rayonnement, UPRESA-CNRS 6004, 6 Bd du Mardchal Juin 14050 Caen Cedex France, [email protected]
Get access

Abstract

The best layers of GaN grown on SiC or sapphire contain high densities of threading dislocations, which do not seem to exhibit a critically important electrical activity. It is possible that the electrical activity of these dislocations may change with time. The large majority of the threading dislocations are a type, with 1/3 <1120> Burgers vector and their line parallel to the [0001] growth direction. The atomic structure of the a threading dislocations was found to correspond to 5/7 or 8 atoms rings core with rather equal frequency. The 8 atoms ring cores contain dangling bonds and will present favourable sites for atomic impurities which eventuallly can modify the good performances of the devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 459
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. Ponce, F.A., Bour, D. P., Gotz, W., Johnson, N.M., Helava, H. I., Grzegory, I., Jun, J., and Porowski, S., Appl. Phys. Lett. 68, 917 (1995).Google Scholar
2. Ning, X.J., Chien, F. R., Pirouz, P., Wang, J. W. and Khan, M. A., J. Mater. Res. 3, (1996) 580 Google Scholar
3. Vermaut, P., Ruterana, P., Nouet, G., Salvador, A., and Morkog, H., Inst. Phys. Conf. Ser. 146, 289 (1995).Google Scholar
4. Mills, M.J., and Stadelmann, P. Phil. Mag. A60 (1989) 355 Google Scholar
5. Vila, A., Cornet, A., Morante, J. R., Ruterana, P., Loubradou, M., Bonnet, R., Gonzalez, Y., and Gonzalez, L., Phil. Mag. A71, (1995) 85 10.1080/01418619508242957Google Scholar
6. De Crecy, A., Bourret, A., Naka, S. and Lasalmonie, A., Phil. Mag. A47 (1983) 245 Google Scholar
7. Feldmann, C., Geutcher, G., Lereah, Y., and Griinbaum, E., Inst. Phys. Conf. Ser. 76, (1985) 239 Google Scholar
8. Westwood, A.D., Notis, M.R., J. Am. Soc. 74 (1991) 1226 Google Scholar
9. Hagege, S. and Ishida, Y., Phil. Mag. A63, (1991) 241 10.1080/01418619108204848Google Scholar
10. Westwood, A.D., Youngman, R., McCartney, M.R., Cormack, A.N., and Notis, M.R., J. Mater. Res. 10, (1995) 1270 Google Scholar
11. Vermaut, P., Ruterana, P., Nouet, G., Salvador, A., and Morkog, H., Phil. Mag. A75, (1997), 239.Google Scholar
12. Vermaut, P., Ruterana, P., and Nouet, G., Phil. Mag. A76 (1997)1215.10.1080/01418619708214224Google Scholar
13. Ponce, F.A. MRS Bulletin 22, (1997) 51 Google Scholar
14. Ruterana, P., Vermaut, P., Nouet, G., Salvador, A., and Morkog, H. Mater. Res. Soc. Internet Journal of Nitride Semiconductor Research, Vol.2 (1997) paper 42.Google Scholar
15. Potin, V., Ruterana, P., Hairie, A., Nouet, G., presented at the MRS Fall meeting Boston 1-5 dec 1997 Google Scholar
16. Potin, V., Ruterana, P., Nouet, G., Botchkarev, A., Salvador, A. and Morkoc, H., Mater. Sci. Eng. B. 1998, in pressGoogle Scholar
17. Ruterana, P., Vermaut, P., Potin, V., Nouet, G., Botchkarev, A., Salvador, A. and Morkoc, H., Mater. Sci. Eng. B. 1998, in pressGoogle Scholar
18. Lin, M.E., Strite, S., Agarwal, A., Salvador, A., Zhou, G.L., Teragush, N., Rockett, A., and Morkoc, H., Appl. Phys. Lett. 62, (1993) 702 Google Scholar
19. Bonnet, R., Acta Met. 29, (1981) 437 Google Scholar
20. Stadelmann, P., Ultramicroscopy 21, 131 (1987).Google Scholar
21. Homstra, J. Phys. Chem. Solids 5 (1957) 129 Google Scholar
22. Papon, A.M., and Petit, M., Scripta Met. 19, (1985) 391 Google Scholar