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The Composition and Interfacial Properties of Cvd Tungsten Films

Published online by Cambridge University Press:  25 February 2011

C. Yang ,
S. Mehta  and
P. Davies
C. Yang
Affiliation:
Intel corporation, 3065 Bowers Ave. Santa Clara, CA 95051
S. Mehta
Affiliation:
Intel corporation, 3065 Bowers Ave. Santa Clara, CA 95051
P. Davies
Affiliation:
Intel corporation, 3065 Bowers Ave. Santa Clara, CA 95051
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Extract

CVD tungsten has been under active investigation as a contact barrier, as a material for contact fill and via fill, and as an interconnect metal for VLSI applications [1].

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 76: Symposium C – Science and Technology of Microfabrication , 1986 , 247
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

1. “Tungsten and Other Refractory Metals for VLSI Applications”, Blewer, R. S. editor, Proceedings of the Workshop Oct. 7–9, 1985 Google Scholar
2. Broadbent, E. K. and Ramiller, C. L., J. Electrochem. Soc. 131, 1427 (1984).Google Scholar
3. Stacy, W. T., Broadbent, E. K., and Norcott, M. H., J. Electrochem. Soc. 131, 444 (1985).CrossRefGoogle Scholar
4. Paine, D., Bravman, J., and Yang, C., submitted to J. Appl. Phy. Lett.Google Scholar