Hostname: page-component-669899f699-7xsfk Total loading time: 0 Render date: 2025-05-05T20:53:25.475Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of Dislocations and Interfaces in Semiconductors by High Resolution Electron Microscopy

Published online by Cambridge University Press:  15 February 2011

J.C.H. Spence  and
A. Olsen
J.C.H. Spence
Affiliation:
Dept. of Physics, Arizona State University, Tempe, AZ 85281
A. Olsen
Affiliation:
Dept. of Physics, Arizona State University, Tempe, AZ 85281
Get access

Abstract

It is not presently possible to resolve the individual atoms in any semiconductor by high resolution electron microscopy (HREM). However symmetry arguments may be used to allow near-atomic resolution lattice images to be interpreted in rare favorable cases. This method is applied to the problem of distinguishing shuffle and glide set partial dislocations in silicon. It is also proposed that two dimensional characteristic loss energy selected diffraction patterns be used to reveal the local symmetry about selected substitutional species implanted in semiconductor lattices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980 , 279
Copyright
Copyright © Materials Research Society 1981

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Goodman, P. et al. , Proc. 38th EMSA Meeting (Claitors, Baton Rouge, 1980) 174. Google Scholar
2. Carpenter, R. and Spence, J.C.H., Acta Cryst. (1980) in press.Google Scholar
3. For a review, see J. de Phys. C-6 (1979).Google Scholar
4. Olsen, A. and Spence, J.C.H., Phil. Mag. (1980) in press.Google Scholar
5. Marklund, S., Phys. Stat. Sol. (b) 92, p. 83 (1979).Google Scholar
6. Louie, S. G., Phys. Rev. B22, p. 1933 (1980).Google Scholar
7. Skarnulis, J., Iijima, S. and Cowley, J. M., Acta Cryst. A32, p. 7–9 (1976).Google Scholar
8. Uyeda, N. et al. , Chemica Scripta 14, p. 47 (1979).Google Scholar
9. Olsen, A. et al. , Proc. 38th EMSA Meeting (Claitor's, Baton Rouge, 1980) 318.Google Scholar
10. Craven, A. J. et al. , Phil. Mag. A38, p. 519 (1978).Google Scholar
11. Spence, J.C.H., Optik (1980) in press.Google Scholar
12. Egerton, R. F., Ultramicroscopy 4, p. 169 (1979).CrossRefGoogle Scholar