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Characterization Of APB's In GaP

Published online by Cambridge University Press:  15 February 2011

Dov Cohen  and
C. Barry Carter
Dov Cohen
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota 421 Washington Ave S.E., Minneapolis, MN 55455
C. Barry Carter
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota 421 Washington Ave S.E., Minneapolis, MN 55455
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Abstract

Antiphase boundaries in GaP crystals epitactically grown on Si (001) have been characterized using transmission electron microscopy. Convergent-beam electron diffraction was used to identify the antiphase-related grains. The antiphase boundaries were observed to adopt facets parallel to specific crystallographic orientations. Furthermore, stacking-fault-like contrast was observed along the interface suggesting that the domains may be offset from one another by a rigid-body lattice translation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 503
Copyright
Copyright © Materials Research Society 1997

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