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Cathodoluminescence Studies of Stacking Faults in a Quantum Well Structure

Published online by Cambridge University Press:  28 February 2011

S.J. Bailey  and
J.W. Steeds
S.J. Bailey
Affiliation:
Now at Materials Research Laboratory, University of Illinois, Urbana, IL 61801
J.W. Steeds
Affiliation:
H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol, BS8 lTL, UK
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Abstract

A GaAs/AlxGal−xAs multiple quantum well structure was examined using low temperature (35K) cathodoluminescence in a transmission electron microscope. In this sample, stacking faults were found to occur in two different forms. The intensity of the dominant n=l(e-hh) luminescence was observed to decrease in the immediate vicinity of either form. In addition, stacking faults gave rise to several new emission features on the low energy side of the main peak. We discuss differences in cathodoluminescence spectra obtained from the two stacking fault configurations and present evidence to suggest that these features may be due to extrinsic luminescence from impurities associated with the stacking faults.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 138: Symposium Q – Characterization of the Structure and Chemistry of Defects in Materials , 1988 , 503
Copyright
Copyright © Materials Research Society 1989

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