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Boron Diffusion in Fluorine Preamorphized Silicon During Rapid Thermal Annealing

Published online by Cambridge University Press:  21 February 2011

H. Kinoshita ,
T. H. Huang ,
D. L. Kwong  and
P. E. Bakeman JR.
H. Kinoshita
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
T. H. Huang
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
D. L. Kwong
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
P. E. Bakeman JR.
Affiliation:
IBM General Technology Division, Essex Junction, VT 05452
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Abstract

The effect of fluorine preamorphization on boron diffusion and activation during rapid thermal annealing (RTA) has been investigated. Compared with low energy B or BF2 implant into crystalline Si, F preamorphization suppressed the transient enhanced diffusion of B and increased dopant activation. Results show that the tail diffusion was absent, and thus the junction depth of the RTA annealed sample was established by the as-implanted B profile. Secondary ion mass spectroscopy and cross-sectional transmission electron micrograph results show F accumulation near the surface and at end-of-range defects. The interaction of F with defects is believed to reduce the B diffusion during RTA.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 303: Symposium G – Rapid Thermal and Integrated Processing II , 1993 , 253
Copyright
Copyright © Materials Research Society 1993

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References

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