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Atomistic Simulation of Dislocation Interactions with a σ = 5 (210) Grain Boundary during Nanoindentation of Ni

Published online by Cambridge University Press:  15 March 2011

Ho Jang  and
Diana Farkas
Ho Jang
Affiliation:
Department of Materials Science and Engineering, Korea University, Seoul, 136-701, Korea
Diana Farkas
Affiliation:
Department of Materials Science and Engineering, Virginia Polytechnic Institute, Blacksburg, VA 24061, USA
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Abstract

Molecular dynamics simulations of nanoindentation were performed using embedded atom potentials. The indentation was simulated on a Ni substrate using a diamond-like spherical indenter. In this study, we focused on the interaction of a σ=5 (210) grain boundary with the dislocations that were nucleated and expanded as loops under the indenter during nano- indentation. The results showed that dislocation loops were nucleated beneath the surface and propagated on multiple {111} slip planes. These dislocations impinged into the grain boundary in the course of nanoindentation. The lattice dislocations changed the atom configuration at the boundary region as they merged into the grain boundary and at later stages they transmitted across the grain boundary. The results also showed that the presence of a grain boundary affected the indenting speed and dislocation motion during nanoindentation, with the grain boundary retarding the indentation process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 821: Symposium P – Nanoscale Materials & Modeling-Relations Among Processing, Microstructure and Mechanical Properties , 2004 , P8.17
Copyright
Copyright © Materials Research Society 2004

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