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Atomic Level Control in Crystal Growth Utilizing Reconstruction of the Surface Superstructure

Published online by Cambridge University Press:  16 February 2011

Takashi Fuyuki ,
Tatsuo Yoshinobu  and
Hiroyuki Matsunami
Takashi Fuyuki
Affiliation:
Kyoto University, Dept. of Electrical Engineering, Yoshidahonmachi, Sakyo, Kyoto 606-01, Japan
Tatsuo Yoshinobu
Affiliation:
Kyoto University, Dept. of Electrical Engineering, Yoshidahonmachi, Sakyo, Kyoto 606-01, Japan
Hiroyuki Matsunami
Affiliation:
Kyoto University, Dept. of Electrical Engineering, Yoshidahonmachi, Sakyo, Kyoto 606-01, Japan
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Abstract

A novel mechanism of atomic level control in crystal growth utilizing reconstruction of surface superstructures is proposed. We have found a distinguished feature of surface reconstruction during crystal growth of 3C-SiC using an alternate gas molecular beam supply of Si2H6 and C2H2. When Si2H6 is supplied, S atoms generated by thermal decomposition adsorb on the surface constructing superstructures. A fixed number of Si atoms forming surface superstructures can react with C2H2 yielding single crystalline 3C-SiC growth in the subsequent period, which realizes atomic level control in epitaxy of 3C-SiC. The reconstruction sequence is analyzed based on RHEED observations, and the obtained crystal quality is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 222: Symposium D – Atomic Layer Growth and Processing , 1991 , 207
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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