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Atomic Diffusion Processes in Silicon

Published online by Cambridge University Press:  25 February 2011

Sokrates T. Pantelides
Sokrates T. Pantelides*
Affiliation:
IBM Research Division Thomas J. Watson Research Center Yorktown Heights, NY 10598
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Abstract

The mechanisms of self-diffusion and dopant impurity diffusion in silicon have been the subject of intense debate since the 1960’s. Until the mid-1980’s, there was only limited experimental information and virtually no theory. In the last five years, however, first-principles calculations of many key quantities and new experimental data have led to significant progress. This paper traces the major theoretical advances and the key experimental data that have resolved many controversies and have provided a fairly comprehensive picture of diffusion processes. Theory has also recently provided detailed microscopic information about the diffusion of interstitial hydrogen.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 511
Copyright
Copyright © Materials Research Society 1990

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References

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