Hostname: page-component-55f67697df-sqlfs Total loading time: 0 Render date: 2025-05-09T00:57:34.259Z Has data issue: false hasContentIssue false
  • English
  • Français

Applications of In Situ Ellipsometry in RTP Temperature Measurement and Process Control

Published online by Cambridge University Press:  28 February 2011

Hisham Z. Massoud ,
Ronald K. Sampson ,
Kevin A. Conrad ,
Yao-Zhi Hu  and
Eugene A. Irene
Hisham Z. Massoud
Affiliation:
Department of Electrical Engineering, Duke University, Durham, NC 27706
Ronald K. Sampson
Affiliation:
Department of Electrical Engineering, Duke University, Durham, NC 27706
Kevin A. Conrad
Affiliation:
Department of Electrical Engineering, Duke University, Durham, NC 27706 Department of Chemistry, University of North Carolina, Chapel Hill, NC 27514
Yao-Zhi Hu
Affiliation:
Department of Chemistry, University of North Carolina, Chapel Hill, NC 27514
Eugene A. Irene
Affiliation:
Department of Chemistry, University of North Carolina, Chapel Hill, NC 27514
Get access

Abstract

The applications of in situ automated ellipsometry in the measurement and control of temperature in rapid-thermal processing (RTP) equipment are investigated. This technique relies on the accurate measurement of the index of refraction of a wafer using ellipsometry and the strong temperature dependence of the index of refraction to determine the wafer temperature. In principle, this technique is not limited to silicon wafer processing and could be applied to any surface whose index of refraction has a strong and well known temperature dependence. This technique is non-invasive, non-contact, fast, accurate, compatible with ultraclean processing, and lends itself to monitoring the dynamic heating and cooling cycles encountered in rapid-thermal processing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 224: Symposium F – Rapid Thermal and Integrated Processing I , 1991 , 17
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. See for example: Moslehi, M. M., in Rapid Thermal and Related Processing Techniques, Singh, R. and Moslehi, M. M., Eds., SPIE Vol. 1393, the International Society of Optical Engineering, Bellingham, MA, p. 280 (1990), and references therein.CrossRefGoogle Scholar
2. Massoud, H. Z., Sampson, R. K., Conrad, K. A., Hu, Y.-Z., and Irene, E. A., “Principles of Wafer Temperature Measurement Using In-Situ Ellipsometry,” Third International Symposium on Ultra Large Scale Integration Science and Technology, ULSI III, Spring Meeting of the Electrochemical Society, May 5-10, Washington, D.C., 1991.Google Scholar
3. Massoud, H. Z., Plummer, J. D., and Irene, E. A., J. Electrochem. Soc., Vol. 132, 2685 and 2693 (1985).CrossRefGoogle Scholar
4. Tomita, T., Kinosada, T., Yamashita, T., Shiota, M., and Sakurai, T., Jap. J. Appl. Phys., Vol. 25, L925 (1986).Google Scholar
5. Kroesen, G. M. W., Oehrlein, G. S., and Bestwick, T. D., J. Appl. Phys., Vol. 69, 3390 (1991).Google Scholar
6. van der Meulen, Y. J. and Hien, N. C., J. Opt. Soc. Am., Vol. 64, 804 (1974).CrossRefGoogle Scholar
7. Zaininger, K. H. and Revesz, A. G., RCA Review, Vol. 25, 85 (1964).Google Scholar
8. McCrackin, F. L., NBS Tech. Note 479 (1969).Google Scholar
9. Sampson, R. K. and Massoud, H. Z., to be published.Google Scholar
10. Sampson, R. K. and Massoud, H. Z., “Simultaneous Measurement of Wafer Temperature and Native Oxide Thickness Using Ellipsometry,” Third International Symposium on Ultra Large Scale Integration Science and Technology, ULSI III, Spring Meeting of the Electrochemical Society, May 5-10, Washington, D.C., 1991.Google Scholar
11. Yu, C. T., Isaak, K. H., and Sheets, R. E., ECS Fall Meeting, Seattle, Wa, October 1990.Google Scholar