Hostname: page-component-669899f699-7xsfk Total loading time: 0 Render date: 2025-05-05T15:56:23.577Z Has data issue: false hasContentIssue false
  • English
  • Français

An Anomalous Deep Center (EC-0.31 Ev) in Semi-Insulating GaAs

Published online by Cambridge University Press:  15 February 2011

Z-Q. Fang  and
D. C. Look
Z-Q. Fang
Affiliation:
Physics Department, Wright State University, Dayton, OH 45435 USA
D. C. Look
Affiliation:
Physics Department, Wright State University, Dayton, OH 45435 USA
Get access

Abstract

A prominent deep center in semi-insulating GaAs, T5 at Ec×0.31 eV, has been studied by thermally stimulated current (TSC) spectroscopy using variation of illumination energy, intensity, and time. Unlike the case for most of TSC traps, the steady-state (long illumination time) peak intensity of T5 varies with light intensity. With the additional evidence that T5 seems to be related to both AsGa and VAs, it is possible that a photoinduced interaction AsGa.-VAs→VGa,-Asi-VAs is taking place.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 405
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. Fang, Z-Q. and Look, D. C., J. Appl. Phys. 69, 8177 (1991)Google Scholar
2. Desnica, U. V., Santic, B., Desnica, D. I., and Pavlovic, M., J. Electron. Mater. 22, 403 (1992)Google Scholar
3. Desnica, D. I., J. Electron. Mater. 21, 463 (1992)Google Scholar
4. Martin, G. M., Mitonneau, A. and Mircea, A., Electron. Lett. 13, 191 (1977)Google Scholar
5. Fang, Z-Q. and Look, D. C., Appl. Phys. Lett. 59, 48 (1991)Google Scholar
6. Fang, Z-Q. and Look, D. C., J. Appl. Phys. 73, 4971 (1993)Google Scholar
7. Fang, Z-Q. and Look, D. C., Appl. Phys. Lett. 66, 3033 (1995)Google Scholar
8. Fang, Z-Q., Look, D. C., Kuisma, S., Saarinen, K., and Hautojarvi, P., in Proceedings of 9th Conference on Semiconducting and Insulating Materials, Toulouse (1996) (in press)Google Scholar
9. Desnica, U. V., Desnica, D. I., and Santic, B., Appl. Phys. Lett. 58, 278 (1991)Google Scholar
10. Jimenez, J., Gonzalez, M. A., Hernandez, P., Saja, J. A. de, and Bonnafe, J., J. Appl. Phys. 57, 1152 (1985)Google Scholar
11. Santic, B., Desnica, U. V., Radic, N., Desnica, D. I., and Pavlovic, M., J. Appl. Phys. 73, 5181 (1993)Google Scholar
12. Silverberg, P., Omling, P., and Samuelson, L., Appl. Phys. Lett. 52, 1689 (1988)Google Scholar
13. Look, D. C. and Fang, Z-Q., J. Appl. Phys. 80, 3590 (1996)Google Scholar
14. Pons, D. and Bourgoin, J. C., J. Phys. C. Solid State Phys. 18, 3839 (1985)Google Scholar
15. Baraff, G. A. and Schluter, M., Phys. Rev. B 33, 7346 (1986)Google Scholar
16. Bar-Yam, Y. and Joannopoulos, J. D., Phys. Rev. Lett. 56, 1213 (1986)Google Scholar
17. Saarinen, K., Kuisma, S., Hautojarvi, P., Corbel, C., and Berre, C. Le, Phys. Rev. Lett. 70, 2794 (1993)Google Scholar
18. Fang, Z-Q., Hemsky, J. W., and Look, D. C., Mat. Res. Soc. Symp. 325, 431 (1994)Google Scholar
19. Look, D. C., Fang, Z-Q., and Sizelove, J. R., Phys. Rev. B 49, 16757 (1994)Google Scholar