Hostname: page-component-55f67697df-xq6d9 Total loading time: 0 Render date: 2025-05-10T01:50:05.852Z Has data issue: false hasContentIssue false
  • English
  • Français

Amorpiious Silicon Thin Film Transistor and its Applications to Large-Area Electironics

Published online by Cambridge University Press:  21 February 2011

H. C. Tuan
H. C. Tuan*
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
Get access

Abstract

In this paper, the amorphous silicon thin film transistor (a-Si:HTFT) technology is reviewed. Its applications to both one- and two-dimensional large-area devices are described. The issues related to the fabrication of TFT arrays on large-area substrates are also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 33: Symposium D – Comparison of Thin Film Transistor and SOI Technologies , 1984 , 247
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Snell, A. J., Mackenzie, K. D., Spear, W. E., and Comber, P. G. Le, Appl. Phys. 24, 357–362 (1981)CrossRefGoogle Scholar
2. Kawai, S., Takagi, N., Kodama, T., Asama, K., and Yanagisawa, S., SID 82 Digest, 42–43 (1982)Google Scholar
3. Okubo, Y., Nakagiri, T., Osada, Y., Sugata, M., Kitahara, N., and Hatanaka, K., SID 82 Digest, 40–41 (1982)Google Scholar
4. LeContellec, M., Morin, F., Richard, J., Coissard, P., Morel, M., and Bonnel, M., SID 82 Digest, 44–45 (1982)Google Scholar
5. Alt, P. M., Pleshko, P., IEEE Trans. on Electron Devices, Vol. ED–21, No. 2, 146–155 (1974)CrossRefGoogle Scholar
6. Mackenzie, K. D., Snell, A. J., French, I., LeComber, P. G., and Spear, W. E., Applied Physics A31, 87 (1983)CrossRefGoogle Scholar
7. Ishibashi, K., Matsumura, M., Appl. Phys. Lett. 41(5), 454–456 (1982)10.1063/1.93569Google Scholar
8. Tuan, H. C., Thompson, M. J., Johnson, N. M., and Lujan, R. J., IEEE Electron Device Letters EDL–3, 357–359 (1982)10.1109/EDL.1982.25599Google Scholar
9. Powell, M. J., Easton, B. C., and Hill, O. F., Appl. Phys. Lett. 38, 794–796 (1981)Google Scholar
10. Lakatos, A. I., MRS Bulletin, January/February (1983)Google Scholar
11. Matsui, M., Shiraki, Y., Katayama, Y., Kobayashi, K. L. I., Shintani, A., and Maruyama, E., Appl. Phys. Lett. 37, 936 (1980)10.1063/1.91766CrossRefGoogle Scholar
12. Oana, Y., Kotake, H., Mukai, N., and Ide, K., Jap. J. Appl. Phys., 22, Supplement 22–1, 493–496 (1983)Google Scholar
13. Luo, F-C., Hoesly, D., SID 82 Digest, 46–47 (1982)Google Scholar
14. Matsuura, M., Takafuji, Y., Nonomura, K., Funada, F., and Wada, T., SID 82 Digest, 34–35 (1982)Google Scholar
15. Lee, K. F., Gibbons, J. F., and Saraswat, K. C., Appl. Phys. Lett. 35(2), 173–175 (1979)Google Scholar
16. Karnins, T. I., Pianetta, P. A., IEEE Electron Device Letters, EDL–1(10), 214–216 (1980)Google Scholar
17. Johnson, N. M., Biegelsen, D. K., and Moyer, M. D., Laser and Electron-Bean? Solid Interactions and Materials Processing, Gibbons, J. F., Hess, L. D., and Sigmon, T. W., eds. (Elsevier, New York 1981), 463 (1981)Google Scholar
18. Lam, H. W., Tasch, A. F. Jr., and Holloway, T. C., IEEE Electron Device Letters, EDL–1(10), 206–208 (1980)Google Scholar
19. Lemons, R. A., Bosch, M. A., Dayem, A. H., Grogan, J. K., and Mankiewich, P. M., Appl. Phys. Lett. 40(6), 469–471 (1982)10.1063/1.93137Google Scholar
20. Powell, M. J., Nicholls, D. H., Proc. lEE (Part I) 130, 2 (1983)Google Scholar
21. Luo, F. C., Pultorak, D., and Freeman, E., IEEE Trans. Electron Devices, ED–30(3), 202–206, (1983)Google Scholar
22. Hamano, T., Ito, H., Nakamura, T., Ozawa, T., Fuse, M., and Takenouchi, M., Jap. J. Appl. Phys., 21, Supplement 21–1, 245–249 (1982)10.7567/JJAPS.21S1.245Google Scholar
23. Okumura, F., Kaneko, S., Paper D7.4, this symposium.Google Scholar
24. Knights, J. C., Jap. J. Appl. Phys. 18, Supplement 18–1, 101–108 (1979)Google Scholar
25. Tsai, C. C., private communication.Google Scholar
26. McGreivy, D. J., IEEE Trans. Electron Devices, ED–24, 730–738 (1977)Google Scholar
27. Kodama, T., Takagi, N., Kawai, S., Nasu, Y., Yanagisawa, S., and Asama, K., IEEE Electronic Device Letters, EDL–3(7) 187, (1982)10.1109/EDL.1982.25532Google Scholar
28. Bond, R. A., Naguib, H. M., SPIE Vol.221 Semiconductor Microlithography V, (1980)Google Scholar
29. Nowicki, R., Dahlquist, B., private communication.Google Scholar