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Amorphization and the Effect of Implanted Ions in Sic

Published online by Cambridge University Press:  16 February 2011

L. L. Snead  and
S. J. Zinkle
L. L. Snead
Affiliation:
Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, TN 37831-6376
S. J. Zinkle
Affiliation:
Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, TN 37831-6376
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Abstract

The effects of implanted ion chemistry and displacement damage on the amorphization threshold dose of SiC were studied using cross-section transmission electron microscopy. Room temperature as well as 200 and 400°C irradiations were carried out with 3.6 MeV Fe, 1.8 MeV Cl, 1 MeV He or 0.56 MeV Si ions. The room temperature amorphization threshold dose in irradiated regions well separated from the implanted ions was found to range from 0.3 to 0.5 dpa for the four different ion species. The threshold dose for amorphization in the He, Si and Fe ion-implanted regions was also σ0.3 to 0.5 dpa. On the other hand, the amorphization threshold in the Climplanted region was only about 0.1 dpa. The volume change associated with amorphization was σ17&. No evidence for amorphization was obtained in specimens irradiated at 200 or 400°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 373: Symposium Y – Microstructure of Irradiated Materials , 1994 , 377
Copyright
Copyright © Materials Research Society 1995

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