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Thin Film Growth of Group III Nitrides by Mass Separated Ion Beam Deposition

Published online by Cambridge University Press:  10 February 2011

C. Ronning ,
E. Dreher ,
H. Feldermann ,
M. Sebastian ,
J. Zweck ,
R. Fischer  and
H. HofsÄss
C. Ronning
Affiliation:
Universität Konstanz, Fakultät für Physik, Postfach 5560, 78434 Konstanz, Germany
E. Dreher
Affiliation:
Universität Konstanz, Fakultät für Physik, Postfach 5560, 78434 Konstanz, Germany
H. Feldermann
Affiliation:
Universität Konstanz, Fakultät für Physik, Postfach 5560, 78434 Konstanz, Germany
M. Sebastian
Affiliation:
Universität Konstanz, Fakultät für Physik, Postfach 5560, 78434 Konstanz, Germany
J. Zweck
Affiliation:
Universität Regensburg, NFW-2 Physik, Universitätsstr. 31, 93040 Regensburg, Germany
R. Fischer
Affiliation:
Universität Regensburg, NFW-2 Physik, Universitätsstr. 31, 93040 Regensburg, Germany
H. HofsÄss
Affiliation:
Universität Konstanz, Fakultät für Physik, Postfach 5560, 78434 Konstanz, Germany
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Abstract

We have grown gallium nitride (GaN), aluminum nitride (AIN) and boron nitride (BN) thin films by mass separated ion beam deposition. All deposited films were found to be almost stoichiometric. AIN and GaN films are crystalline even after room temperature deposition whereas for the formation of crystalline boron nitride temperatures above 150°C are necessary. The influence on the phase formation and the film structure of ion energy and substrate temperature on the one hand, and bond ionicity on the other hand, was investigated for these three systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 331
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Hofsäss, H., Binder, H., Klumpp, T. and Recknagel, E., Diam. Relat. Mater. 3, 137(1994).Google Scholar
2. Hofsäss, H., Ronning, C., Griesmeier, U., Gross, M., Mater. Res. Soc. Proc. Vol. 354 (1995) 93; and this conference contribution A8.4.Google Scholar
3. Hofsäss, H., Ronning, C., Griesmeier, U., Gross, M., Reinke, S., and Kuhr, M., Appl. Phys. Lett. 67, 46 (1995); Nucl. Instr. & Meth. B 106, 153 (1995).Google Scholar
4. Qin, F., Wang, X., Liu, Z., Yao, Z., Ren, Z., Lin, L., Su, S., Jiamg, W., and Lau, W.M., Rev. Sci. Instrum. 62, 2322 (1991).Google Scholar
5. Bello, I., Lau, W.M., Lawson, R.P.W., and Foo, K.K., J. Vac. Sci. Technol. A 10, 1642 (1992).Google Scholar
6. Shinar, R., J. Vac. Sci. Technol. A 10, 137 (1992).Google Scholar
7. Doolittle, L.R., Nucl. Inst. & Methr. B 15, 227 (1986).Google Scholar
8. Corczyca, I., Christensen, N.E., Peltzer, E.L. and Rodriguez, C.O., Phys. Rev. B 51, 11936 (1995).Google Scholar
9. Vispute, R.D., Narayan, J., Wu, H. and Jagannadham, K., J. Appl. Phys. 77, 4724 (1995).Google Scholar
10. Weeks, T.W., Bremser, M.D., Ailey, K.S., Carlson, E., Perry, W.G., and Davis, R.F., Appl. Phys. Lett. 67, 401 (1995).Google Scholar
11. Phillips, J. C., Rev. Mod. Phys. 42, 317 (1970), Bonds and Bands in Semiconductors (Academic, New York, 1973).Google Scholar
12. Sachdev, H., Haubner, R., Lux, B., and Nüth, H., Diam. & Rel. Mater. 6 (1997) to be published.Google Scholar
13. Bohr, S., Haubner, R., and Lux, B., Diam. Relat. Mater. 4, 714 (1995).Google Scholar
14. Hofsäss, H., Feldermann, H., Sebastian, M., and Ronning, C., submitted to Phys. Rev. Lett..Google Scholar
15. Reinke, S., Kuhr, M., and Kulisch, W., Diam. Relat. Mater. 4, 272 (1995).Google Scholar
16. Kester, D.J., and Messier, R., J. Appl. Phys. 72, 504 (1992).Google Scholar
17. Lifshitz, Y., Kasi, S.R., and Rabalais, J.W., Phys. Rev. Lett. 62, 1290 (1989).Google Scholar
18. Hofsäss, H. and Ronning, C., in: Proc. 2nd Int. Conf. on Beam Processing of Advanced Materials, edited by Singh, J., Copley, S.M., Mazumder, J., (ASM International, Materials Park, 1996) p. 29–56.Google Scholar
19. Mirkarimi, P.B., Medlin, D.L., McCarty, K.F., and Barbour, J.C., Appl. Phys. Lett. 66, 2813 (1995).Google Scholar
20. Ronning, C., Dreher, E., Feldermann, H., Gross, M., Sebastian, M., and Hofsass, H., Diam. & Relat. Mater. 6 (1997), to be published.Google Scholar
21. Kester, D.J., Ailey, K.S., Davis, R.F., and More, K.L., Mater, J.. Res. 8, 1213 (1993).Google Scholar