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Thermal Activation of Beryllium in GaN Grown by RF-Plasma Molecular Beam Epitaxy

Published online by Cambridge University Press:  01 February 2011

B. L. VanMil ,
Kyoungnae Lee ,
Lijun Wang ,
N. C. Giles  and
T. H. Myers
B. L. VanMil
Affiliation:
Department of Physics, West Virginia University, Morgantown, WV 26506
Kyoungnae Lee
Affiliation:
Department of Physics, West Virginia University, Morgantown, WV 26506
Lijun Wang
Affiliation:
Department of Physics, West Virginia University, Morgantown, WV 26506
N. C. Giles
Affiliation:
Department of Physics, West Virginia University, Morgantown, WV 26506
T. H. Myers
Affiliation:
Department of Physics, West Virginia University, Morgantown, WV 26506
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Abstract

Differences in the optical activity of Be in GaN epilayers grown on different surface polarities by rf-plasma molecular beam epitaxy are investigated. Nitrogen-polar GaN doped with Be exhibits a significantly higher intensity of donor-acceptor pair (DAP) photoluminescence (PL) than similarly doped Ga-polar GaN, indicating the Be is incorporating at microscopically different sites, or possibly is forming different compensating complexes. Highly Be-doped Ga-polar GaN apparently forms isolated polarity-inverted regions which then incorporate Be via the N-polar mechanism resulting in the DAP PL. High temperature annealing of the Ga-polar layers both under nitrogen/hydrogen mixtures and under pure nitrogen atmospheres activates the DAP PL.

Type
articles
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y10.59
Copyright
Copyright © Materials Research Society 2004

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References

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