Hostname: page-component-669899f699-tpknm Total loading time: 0 Render date: 2025-05-04T06:43:20.681Z Has data issue: false hasContentIssue false
  • English
  • Français

A Theoretical Study of the Etchback Planarization Process

Published online by Cambridge University Press:  25 February 2011

Yue Kuo
Yue Kuo*
Affiliation:
Data General Corp., 433 N. Mathilda Ave., Sunnyvale, CA 94086
Get access

Abstract

A computer modeling method was used to study various factors such as the etch time, the degree of planarization of the sacrificial layer, the original surface shape of the sacrificial layer, the etch ratio, and the original oxide step shape, that directly affect the topography of an etchback planarized surface.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 76: Symposium C – Science and Technology of Microfabrication , 1986 , 209
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCE

1. Kuo, Y., SPIE's Symposium on Advances in Semiconductors and Semiconductor Structures, Bay Point, FL., March 23–27, 1987 Google Scholar
2. Mucha, J. A., Solid State Technol. 28(3), 123 (1985)Google Scholar
3. Wilson, R. H. and Piacente, P. A., Semicond. International 116, April 1986 Google Scholar
4. Mercier, J. S., Naguib, H. M., Ho, V. Q., and Nentwich, H., J. Electrochem. Soc., 13(5), 1219 (1985)Google Scholar