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Reduction of dislocation density in AlGaN with high AlN molar fraction by using a rugged AlN epilayer

Published online by Cambridge University Press:  01 February 2011

Akira Ishiga ,
Takashi Onishi ,
Yuhuai Liu ,
Masaya Haraguchi ,
Noriyuki Kuwano ,
Tomohiko Shibata ,
Mitsuhiro Tanaka ,
Hideto Miyake  and
Kazumasa Hiramatsu
Akira Ishiga
Affiliation:
Faculty of Eng., Mie University 1515 Kamihama, Tsu, Mie, 514–8507, Japan
Takashi Onishi
Affiliation:
Faculty of Eng., Mie University 1515 Kamihama, Tsu, Mie, 514–8507, Japan
Yuhuai Liu
Affiliation:
Satellite Venture Business Lab., Mie University 1515 Kamihama, Tsu, Mie, 514–8507, Japan
Masaya Haraguchi
Affiliation:
Interdisciplinary Graduate School of Engineering Sciences, Kyusyu University 6–1 Kasuga-kouen, Kasuga 816–8580, Japan
Noriyuki Kuwano
Affiliation:
Art, Science and Technology Center for Cooperative Research, Kyusyu University 6–1 Kasuga-kouen, Kasuga 816–8580, Japan
Tomohiko Shibata
Affiliation:
NGK Insulators, Ltd. 2–56 Suda-cho, Mizuho-ku, Nagoya, Aichi, 467–8507, Japan
Mitsuhiro Tanaka
Affiliation:
NGK Insulators, Ltd. 2–56 Suda-cho, Mizuho-ku, Nagoya, Aichi, 467–8507, Japan
Hideto Miyake
Affiliation:
Faculty of Eng., Mie University 1515 Kamihama, Tsu, Mie, 514–8507, Japan
Kazumasa Hiramatsu
Affiliation:
Faculty of Eng., Mie University 1515 Kamihama, Tsu, Mie, 514–8507, Japan
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Abstract

A method for making AlGaN with a high AlN molar fraction and low dislocation density is needed for fabricating deep ultraviolet emitters and detectors. In this study, we reduced the dislocation density in AlGaN over a large surface area by using low-pressure MOVPE on a continuously rugged epitaxial AlN substrate. The AlN molar fraction of the AlxGa1-xN was × = 0.51, and atomic steps in the surface were clearly observed with an atomic force microscope (AFM). In addition, the dislocation density was estimated to be 8.8 × 107 cm−2, which is two orders of magnitude lower than that of AlGaN grown on a flat AlN epitaxial layer. Our results indicate that the dislocation density of AlGaN can be greatly reduced by using a rugged AlN epitaxial substrate with continuously inclined facet.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E3.11
Copyright
Copyright © Materials Research Society 2005

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References

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