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Quaternary Phase Equilibria vs. Strain-Energy at the In.53Ga.47As/InP Interface

Published online by Cambridge University Press:  28 February 2011

Allan E. Schultz  and
Y. Austin Chang
Allan E. Schultz
Affiliation:
Honeywell/SSEC, 12001 Hwy. 55, Plymouth, MN 55441
Y. Austin Chang
Affiliation:
Y. Austin Chang, University of Wisconsin-Madison, Dept. of Materials Science and Engineering, 1509 University Av., Madison, WI 53706
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Abstract

Extensive new data and modeling in the In-Ga-As system has allowed the authors to reexamine the phase equilibria between the melt and the epitaxial solid. A detailed thermodynamic model was constructed with the following improvements: (1) The solid-solid interaction parameters were based on InAs-GaAs miscibility gap data, and (2) liquid-bulk solid, as well as liquid-epitaxial solid, tie-lines were used. Comparison of tie- lines from epitaxial systems and bulk systems demonstrated that strain energy is not the dominant factor in equilibrium growth of epitaxial solid films of In1-xGaxAs on any Ill-V binary substrate. Both the “lattice- pulling” effect and the “substrate-orientation” effect were shown to be caused by different quaternary equilibria at the In1-xGaxAs/InP interface, and not by film-substrate strain.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 377
Copyright
Copyright © Materials Research Society 1989

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References

1. Pearsall, T., Bisaro, R., Ansel, R., Merenda, P., Appl. Phys. Lett, 32(8), p.497–499(1978)Google Scholar
2. Nakajima, K., Semiconductors and Semimetals, Vol. 22(A), Chapter 1, 1985 CrossRefGoogle Scholar
3. Pearsall, T., Quillec, M., Pollack, M., Appl.Phys.Lett., 35(4) p.342–344(1979)Google Scholar
4. Pearsall, T., Hopson, R., J.Appl. Phys., 41(10), p.4407–09(1977)CrossRefGoogle Scholar
5. Nakajima, K., Yamazaki, S., Akita, K., Jpn. J. Appl. Phys., 21, L237(1982)Google Scholar
6. Stringfellow, G., J.Appl. Phys., 43(8), p.3455–3460(1972)CrossRefGoogle Scholar
7. Joncour, M.C., Benchimol, J.L., Burgeat, J., Quillec, M., Journal de.Physique, C5(43), p.3–10,(1982)Google Scholar
8. Larche, F.C., Cahn, J.W., J. Appl. Phys., 62(4), p1232–39(1987)Google Scholar
9. Schultz, A.E., The Relationship between (Ga.In)As and its Melt for the the Bulk and Thin Film Cases, PhD Thesis, University of Wisconsin-Madison, 1988 Google Scholar
10. Ding, J., Washburn, J., Sands, T., Keramidas, V.G., Appl. Phys. Lett.Google Scholar
11 Pollack, M., Nahory, R., Deas, L., Wonsidler, D., J.Electrochem.Soc., 12(11), p. 1550–2(1975.)Google Scholar
12. Pearsall, T., Bisaro, R., Ansel, R., Merenda, P., Appl. Phys. Lett, 32(8), p.497–499(1978)Google Scholar
13 Ghez, R., Small, M.B., J. Crys.Growth, 52, 699–709(1981)CrossRefGoogle Scholar