Hostname: page-component-55f67697df-gmt7q Total loading time: 0 Render date: 2025-05-10T12:20:47.908Z Has data issue: false hasContentIssue false
  • English
  • Français

The Origin of Luminescence From Cerium Oxide on Silicon

Published online by Cambridge University Press:  10 February 2011

Won Chel Choiv ,
Ho Nyung Lee ,
Yong Kim  and
Eun Kyu Kim
Won Chel Choiv
Affiliation:
Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P.O.Box 131, Cheongryang, Seoul 130-650, Korea, [email protected]
Ho Nyung Lee
Affiliation:
Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P.O.Box 131, Cheongryang, Seoul 130-650, Korea
Yong Kim
Affiliation:
Department of Physics, College of Natural Sciences, DongA University, Hadan-2-Dong 840, Saha-gu, Pusan 604-714, Korea
Eun Kyu Kim
Affiliation:
Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P.O.Box 131, Cheongryang, Seoul 130-650, Korea
Get access

Abstract

As the ultra-violet/blue luminescent material, we will introduce the thermal treated cerium oxide on silicon. It has been confirmed a violet/blue luminescence ranging from 358 rim to 450 rnm at room temperature from the thermally treated cerium-dioxide thin films on silicon. As a results of AES and HR-TEM measurement, it was confirmed that cerium silicates were generated by thermal treatment. These cerium silicates such as Ce4.667(SiO4)3O and Ce2Si2O7 are the source of the ultra-violet (UV) emission ranging from 358 nim to 450 nm (maximum at 388 rim).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 560: Symposium E – Luminescent Materials , 1999 , 227
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Chikyow, T., Bedair, S. M., Tye, L., and EI-Masry, N. A., Appl. Phys. Lett. 65, 1030 (1994).Google Scholar
2. Frangoul, A.G., Sundaram, K. B., and Wahid, P. F., J. Vac. Sci. Technol. B9, 101 (1991).Google Scholar
3. Wang, F. and Wordenweber, R., Thin Solid Films, 227, 200 (1993).Google Scholar
4. Morshed, A. H., Moussa, M. E., Bedair, S. M., Leonard, R., Liu, S. X., and EI-Masry, N., Appl. Phys. Lett. 70, 1647 (1997).Google Scholar
5. Nakajima, A., Yoshihara, A., and Ishigame, M., Phys. Rev. B 50, 13297 (1994).Google Scholar
6. Weber, W. H., Hass, K. C., and McBride, J. R., Phys. Rev. B 48, 178 (1993).Google Scholar
7. Wang, R.-P., Zhou, Y.-L., Pan, S.-H., Zhang, H., Guo, X.-X., Xiong, X.-M., Lu, H.-B., Zhen, Z.-H., and Yang, G.-Z., J. Appl. Phys. 84(4), 1994 (1998).Google Scholar
8. Lee, H. N., Kim, Y. T., Choh, S. H., “Proceeding of the 27th European Solid-State Device Research Conference, Stuttgart, Germany, 22-24 September 1997”, pp756–759 (1997).Google Scholar