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New Group III Precursors for the Movpe of GaAs and InP Based Material

Published online by Cambridge University Press:  28 February 2011

M. Hostalhe ,
L. Pohl ,
E. Merck ,
A. Brauers ,
P. Balk ,
V. Frese ,
H. Hardtdegen ,
R. Hovel ,
G.K. Regel  and
A. Molassioti
...Show all authors
M. Hostalhe
Affiliation:
Frankfurter Strape 250, D-6100 Darmstadt, Fed. Rep. of Germany
L. Pohl
Affiliation:
Frankfurter Strape 250, D-6100 Darmstadt, Fed. Rep. of Germany
E. Merck
Affiliation:
Frankfurter Strape 250, D-6100 Darmstadt, Fed. Rep. of Germany
A. Brauers
Affiliation:
Institute of Semiconductor Electronics Aachen Technical University D-5100 Aachen, Fed. Rep. of Germany
P. Balk
Affiliation:
Institute of Semiconductor Electronics Aachen Technical University D-5100 Aachen, Fed. Rep. of Germany
V. Frese
Affiliation:
Institute of Semiconductor Electronics Aachen Technical University D-5100 Aachen, Fed. Rep. of Germany
H. Hardtdegen
Affiliation:
Institute of Semiconductor Electronics Aachen Technical University D-5100 Aachen, Fed. Rep. of Germany
R. Hovel
Affiliation:
Institute of Semiconductor Electronics Aachen Technical University D-5100 Aachen, Fed. Rep. of Germany
G.K. Regel
Affiliation:
4. Institute of Physics University Stuttgart, Pfaffenwaldring 57 D-7000 Stuttgart 80, Fed. Rep. of Germany
A. Molassioti
Affiliation:
4. Institute of Physics University Stuttgart, Pfaffenwaldring 57 D-7000 Stuttgart 80, Fed. Rep. of Germany
M. Moser
Affiliation:
4. Institute of Physics University Stuttgart, Pfaffenwaldring 57 D-7000 Stuttgart 80, Fed. Rep. of Germany
F. Scholz
Affiliation:
4. Institute of Physics University Stuttgart, Pfaffenwaldring 57 D-7000 Stuttgart 80, Fed. Rep. of Germany
H. Schumann
Affiliation:
Department of Inorganic and Analytic Chemistry Technical University Berlin D-1000 Berlin, Fed. Rep. of Germany
K.U. Hartmann
Affiliation:
Department of Inorganic and Analytic Chemistry Technical University Berlin D-1000 Berlin, Fed. Rep. of Germany
W. Wassermann
Affiliation:
Department of Inorganic and Analytic Chemistry Technical University Berlin D-1000 Berlin, Fed. Rep. of Germany
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Abstract

This paper presents proposals for the synthesis of several group III metal organics (In, Ga, Al compounds) and preliminary results on their use in the MOVPE (metal organic vapor phase epitaxy) of III-V semiconductors. The common feature of all these precursors is that they are saturated by interor intramolecular coordination. They are even non-pyrophoric and air resistant which is an interesting aspect with respect to safe handling. In addition, the compounds are liquid at room temperature with a low but sufficient vapor pressure for MOVPE without additional heating of the source.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 205
Copyright
Copyright © Materials Research Society 1989

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