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Published online by Cambridge University Press: 15 February 2011
Epitaxial Nd0.7Sr0.3MnO3-δ and La0.67Ba0.33MnO3-δ thin films with large magnetoresistance ratios have been prepared by pulsed laser deposition. Huge negative magnetoresistance ratios of -ΔR/RH > 1×106 % were obtained at 60 K and a magnetic field of 8 T in a Nd0.7Sr0.3MnO3-δ film. The influence of sample preparation conditions on the resistivity behavior of these films has been studied. Results suggest that oxygen stoichiometry and diffusion are important factors in causing the behavior observed in doped manganese oxide films.