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Formation of Ge Nanocrystals Passivated with Si by Gas Evaporation of Si and Ge

Published online by Cambridge University Press:  17 March 2011

Junjie Si ,
H. Ono ,
K. Uchida ,
S. Nozaki  and
H. Morisaki
Junjie Si
Affiliation:
Department of Electronic Engineering, University of Electro-Communications, Chofu-shi, Tokyo 182-8585, Japan
H. Ono
Affiliation:
Department of Electronic Engineering, University of Electro-Communications, Chofu-shi, Tokyo 182-8585, Japan
K. Uchida
Affiliation:
Department of Electronic Engineering, University of Electro-Communications, Chofu-shi, Tokyo 182-8585, Japan
S. Nozaki
Affiliation:
Department of Electronic Engineering, University of Electro-Communications, Chofu-shi, Tokyo 182-8585, Japan
H. Morisaki
Affiliation:
Department of Electronic Engineering, University of Electro-Communications, Chofu-shi, Tokyo 182-8585, Japan
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Abstract

Two methods are employed in the gas evaporation technique to form Ge nanocrystals with the Si-passivated surface. One uses one boat with a SiGe alloy as a source, and the other uses two boats each with Si and Ge. As a result of characterization by the x-ray diffraction (XRD) measurement, Raman scattering and x-ray photoelectron spectroscopy (XPS), it is found that Ge nanocrystals with the Si-passivated surface were formed by coevaporation of Si and Ge from two boats, while SiGe alloy nanocrystals were formed by evaporation of the Si-Ge alloy source from one boat.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 638: Symposium F – Microcrystaline & Nanocrystalline Semiconductors-2000 , 2000 , F14.4.1
Copyright
Copyright © Materials Research Society 2001

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