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Erbium Doping of Silicon and Silicon Carbide Using Ion Beam Induced Epitaxial Crystallization

Published online by Cambridge University Press:  21 February 2011

P. Boucaud ,
F.-H. Julien ,
J.-M. Lourtioz ,
H. Bernas ,
C. Clerc ,
J. Chaumont ,
S. Bodnar ,
J.-L. Regolini  and
X. W. Lin
P. Boucaud
Affiliation:
IEF, Université Paris XI, Bat 220, 91405 Orsay, FRANCE
F.-H. Julien
Affiliation:
IEF, Université Paris XI, Bat 220, 91405 Orsay, FRANCE
J.-M. Lourtioz
Affiliation:
IEF, Université Paris XI, Bat 220, 91405 Orsay, FRANCE
H. Bernas
Affiliation:
CSNSM, Université Paris XI, Bat 108, 91405 Orsay, FRANCE
C. Clerc
Affiliation:
CSNSM, Université Paris XI, Bat 108, 91405 Orsay, FRANCE
J. Chaumont
Affiliation:
CSNSM, Université Paris XI, Bat 108, 91405 Orsay, FRANCE
S. Bodnar
Affiliation:
France Telecom CNET-CNS, 38243 Meylan, FRANCE
J.-L. Regolini
Affiliation:
France Telecom CNET-CNS, 38243 Meylan, FRANCE
X. W. Lin
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA
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Abstract

Erbium doping of silicon and silicon carbide using implantation followed by ion beam induced epitaxial crystallization (IBIEC) is investigated. The implanted concentration of Er was 1.4 at% in both cases. In Si(100), Rutherford backscattering/channeling revealed that about 40% of the Er atoms evolved upon rapid thermal annealing from an undetermined position (room temperature) to an interstitial tetrahedral position (650°C) and finally to a substitutional position (950°C). The remaining Er atoms were presumably trapped in the small precipitates visible in high resolution transmission electron microscopy. The photoluminescence at 1.54 μπι of Er3+ is enhanced with annealing and persists up to room temperature after a 950 °C 1 min anneal. The high concentration of optically active Er atoms is illustrated by the lack of saturation of the photoluminescence at high pumping excitation intensity. Erbium was also implanted into cubic silicon carbide films prepared by chemical vapor deposition on Si at 900 °C. Both solid phase epitaxy (SPE) and IBIEC were performed. After a 950°C anneal, the low temperature photoluminescence at 1.54 μιη after IBIEC was five times higher in SiC than in silicon. The difference in photoluminescence linewidth between IBIEC (broad lines) and SPE (sharp lines) is explained in terms of interactions between optically active erbium atoms.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 354: Symposium A – Beam Solid Interactions for Materials Synthesis and Characterization , 1994 , 141
Copyright
Copyright © Materials Research Society 1995

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