Hostname: page-component-55f67697df-px5tt Total loading time: 0 Render date: 2025-05-08T16:59:35.000Z Has data issue: false hasContentIssue false
  • English
  • Français

Energy-Transfer Processes in Oxygen-Codoped GaAs:Er

Published online by Cambridge University Press:  10 February 2011

K. Takahei ,
R. A. Hogg  and
A. Taguchi
K. Takahei
Affiliation:
NTT Basic Research Laboratories 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa 243-01, Japan. [email protected]
R. A. Hogg
Affiliation:
NTT Basic Research Laboratories 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa 243-01, Japan. [email protected]
A. Taguchi
Affiliation:
NTT Basic Research Laboratories 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa 243-01, Japan. [email protected]
Get access

Abstract

GaAs grown by metalorganic chemical vapor deposition and codoped with Er and oxygen shows a simple spectrum with sharp luminescence lines due predominantly to one type of Er center. This center is identified as an Er atom substituting a Ga site, coupled with two oxygen atoms. Photoluminescence measurements under host excitation and photoluminescence excitation measurements that directly excite the 4f-shell of the Er3+ ion indicate that this center is excited much more efficiently than other Er centers simultaneously present in the same sample. A possible energy-transfer mechanism and its implications are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 422: Symposium D – Rare-Earth Doped Semiconductors II , 1996 , 267
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

[1] For example, Rare Earth Doped Semiconductors, edited by Pomrenke, G. S., Klein, P. B., and Langer, D. W. (Mater. Res. Soc. Symp. Proc. 301, San Francisco, CA, 1993).Google Scholar
[2] Takahei, K. and Taguchi, A., J. Appl. Phys. 74, p. 1979 (1993).Google Scholar
[3] Takahei, K., Whitney, P. S., Nakagome, H., and Uwai, K., J. Appl. Phys. 65, p. 1257 (1989).Google Scholar
[4] Takahei, K. and Taguchi, A., Jpn. J. Appl. Phys. 33, p. 709 (1994).Google Scholar
[5] Takahei, K., Horikoshi, Y. and Taguchi, A-, in Defects in Semiconductors 18, edited by Suezawa, M. and Katayama-Yoshida, H., (Mater. Science Forum 196–201, Sendai, Japan, 1995), pp. 639–643.Google Scholar
[6] Ennen, H., Wagner, J., Müller, H., and Smith, R., J. Appl. Phys. 61, p. 4877 (1987).Google Scholar
[7] Takahei, K., Taguchi, A., Horikoshi, Y., and Nakata, J., J. Appl. Phys. 76, p. 4332 (1994).Google Scholar
[8] Haase, D., Dörnen, A., Takahei, K., and Taguchi, A., submitted to the Mater. Res. Soc. Symp. Proc. 422, San Francisco, CA, 1996.Google Scholar
[9] Hogg, R. A., Takahei, K., Taguchi, A., and Horikoshi, Y., Appl. Phys. Lett. in press.Google Scholar
[10] Hogg, R. A, Takahei, K., Taguchi, A., and Horikoshi, Y., submitted to the Mater. Res. Soc. Symp. Proc. 422, San Francisco, CA, 1996.Google Scholar
[11] Taguchi, A., Takahei, K., and Nakata, J., in Rare Earth Doped Semiconductors, edited by Pomrenke, G. S., Klein, P. B., and Langer, D. W. (Mater. Res. Soc. Symp. Proc. 301, San Francisco, CA, 1993), pp. 139–150.Google Scholar
[12] Taguchi, A., Takahei, K., and Horikoshi, Y., J. Appl. Phys. 76, p. 7288 (1994).Google Scholar
[13] Rochaix, C., Rolland, A., Favennec, P. N., Lambert, B., Corre, A Le, L'Haridon, H., and Lalvi, M., Jpn. J. Appl. Phys. 27, p. L2348 (1988).Google Scholar
[14] Hüfner, S., Optical Spectra of Transparent Rare Earth Compounds, Academic Press Inc., New York, 1978, Chp. 5.Google Scholar
[15] Takahei, K., Taguchi, A., Nakagome, H., Uwai, K., and Whitney, P. S., J. Appl. Phys. 66, p. 4941 (1989).Google Scholar
[16] Takahei, K. and Taguchi, A., J. Appl. Phys. 77, p. 1735 (1995).Google Scholar
[17] Takahei, K. and Taguchi, A., J. Appl. Phys. 78, p. 5614 (1995).Google Scholar
[18] Taguchi, A. and Takahei, K., in Defects in Semiconductors 18, edited by Suezawa, M. and Katayama-Yoshida, H., (Mater. Science Forum 196–201, Sendai, Japan, 1995), pp. 633–637.Google Scholar