Hostname: page-component-55f67697df-sqlfs Total loading time: 0 Render date: 2025-05-08T12:53:13.646Z Has data issue: false hasContentIssue false
  • English
  • Français

The Effects of Surface Treatments for Low Temperature Silicon Dioxide Deposition on Cadmium Telluride.

Published online by Cambridge University Press:  25 February 2011

Seong S. Choi ,
S. S. Kim ,
D. V. Tsu  and
G. Lucovsky
Seong S. Choi
Affiliation:
Departments of Physics and Materials Science and Engineering, North Carolina State University, Raleigh, N.C. 27695-8202
S. S. Kim
Affiliation:
Departments of Physics and Materials Science and Engineering, North Carolina State University, Raleigh, N.C. 27695-8202
D. V. Tsu
Affiliation:
Departments of Physics and Materials Science and Engineering, North Carolina State University, Raleigh, N.C. 27695-8202
G. Lucovsky
Affiliation:
Departments of Physics and Materials Science and Engineering, North Carolina State University, Raleigh, N.C. 27695-8202
Get access

Abstract

We have successfully deposited thin films of SiO2 on a cadmium telluride substrate at low temperature (Ts =100°C–300°C) by remote plasma enhanced chemical vapor deposition (Remote PECVD). The native oxide on the CdTe substrate has been removed, prior to deposition by either chemical etching in methanol and 1% bromine, or by dissolution in deionized water. After removal of the native oxide, the CdTe was inserted into a UHV-compatible deposition chamber and a He+ plasma treatment was performed prior to deposition of an SiO2 film. This treatment promotes strong adhesion between the deposited SiO2 film and the CdTe surface. We find that the initial oxide removal process does not influence SiO2 adhesion. The effect of the He+ plasma treatment on the CdTe surface has been studied by Auger electron spectroscopy(AES), and Reflection high energy electron diffraction (RHEED).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 313
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Lucovsky, G., J. Vac. Sci. Technol. A3, 346 (1985).Google Scholar
2. Wilson, J. A., Cotton, V.A., Silberman, J.A., Laser, D., Spicer, W.E., Morgan, P., J. Vac. Sci.Technol. A1(3), July/Sept. 1719, 1983.Google Scholar
3. Spicer, W. E., Silberman, J. A., Lindau, I., Chen, A.B., Sher, A., Wilson, J.A., J. Vac. Sci. Technol. A1(3),.1735, 1983 Google Scholar
4. Janousek, B. K., Carscallen, R. C. and Bertrand, P. A., J. Vac. Sci Technol. A1(3), Jul/Sept.,1723, 1983.Google Scholar
5. Choi, S.S., Lucovsky, G., J. Vac. Sci. Technol.,B6(4), Jul/Aug., 1988 Google Scholar
6. Haering, J. P., Werthen, J. G., Bube, R.H., Gulbrandsen, L., Jansen, W., and Luscher, P., J. Vac. Sci. Technol. A1(3), 1469, Jul/Sept. 1983.Google Scholar
7. Ricco, A.J., White, H.S., Wrighton, M.S., J. Vac. Sci. Technol. A2(2), 1984.Google Scholar
8. Silberman, J.A., Laser, D., Lindau, I., Spicer, W.E., and Wilson, J.A., J. Vac. Sci. Technol. A1(3), 1706, July/Sept. 1983 Google Scholar
9. Kim, S.S. and Lucovsky, G., presented at International Topical Conference on Hydrogenated Amorphous Silicon Devices and Technology, 21–23 Nov 1988, Yorktown Heights, New York, U.S.A.Google Scholar
10. Solzbach, U. and richter, H.J., 191–205, Surf. Sci. 97(1980)Google Scholar
11. Benson, J. D., Wagner, B. K., Torabi, A., Summers, C.J., Appl..Phys.Lett. 49(16), 20 Oct. 1986 Google Scholar
12. Kolodzieijsky, L.A., Guhshor, R.L., Otsuka, N., zhang, X.C., Chang, S.K., Nurmikko, A.V., Appl. Phys. Lett. 47(8), 15 Oct. 1985 Google Scholar
13. Mattox, D.M., “Thin Film Adhesion and Adhesive Failure - A Perspective,” in ”Adhesion Measurements of Thin film, Thick Films, and Bulk Coatings. “edited by Mittal, K.L., a symposium by American Society for Testing and Materials Philadelphia, Pa., 2–4, Nov. 1976.Google Scholar
14. Buckley, Donald H., Chapet 1, 5 (Adhesion) in ”Surface Effects in Adhesion, Friction, Wear, and Lubrication,” Elsevier Scientific Publishing Company, 1981 Google Scholar
15. Kiselev, V.F. and krylov, O.V., Chapter 5, “Excited States in Adsorption and Catalysis,” in Adsoption Processes on Semiconductor and Dielectric Surfaces I, Spinger-Verlag, Chemical Physics Series 32Google Scholar
16. Musket, R.G., 423–436, Surf. Sci. 74(1978)CrossRefGoogle Scholar