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Effects of Deposition Parameters on Crystallization of Pecvd Amorphous Silicon Films

Published online by Cambridge University Press:  15 February 2011

Yaozu Wang ,
Reece Kingi ,
Osama O. Awadelkarim  and
Stephen J. Fonash
Yaozu Wang
Affiliation:
Electronic Materials and Processing Research Laboratory, The Pennsylvania State University, University Park, PA 16802
Reece Kingi
Affiliation:
Electronic Materials and Processing Research Laboratory, The Pennsylvania State University, University Park, PA 16802
Osama O. Awadelkarim
Affiliation:
Electronic Materials and Processing Research Laboratory, The Pennsylvania State University, University Park, PA 16802
Stephen J. Fonash
Affiliation:
Electronic Materials and Processing Research Laboratory, The Pennsylvania State University, University Park, PA 16802
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Abstract

Plasma-enhanced chemical vapor deposition was used to deposit a-Si:H thin films (∼ 1000 Å) at various temperatures below 300°C on Coming 7059 glass substrates using a silane-based plasma. These films were used as precursor materials to produce solid phase crystallized polycrystalline silicon (poly-Si) by conventional furnace annealing at 600°C in N2 ambient. The precursor a-Si and final poly-Si films were examined using spectroscopic ellipsometry and transmission electron microscopy. Precursor film deposition temperatures were found to affect the void density in the a-Si film and grain size in the resulting poly-Si film with lower deposition temperatures leading to higher void density in the a-Si film and larger grain size in the poly-Si film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 403: Symposium I – Polycrystalline Thin Films: Structure, Texture, Properties and Applications II , 1995 , 373
Copyright
Copyright © Materials Research Society 1996

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