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THE EFFECT OF LEVEL MIXING IN Er-DOPED Si

Published online by Cambridge University Press:  10 February 2011

M. Federighi ,
A.J. Kenyon ,
C.E. Chryssou  and
C.W. Pitt
M. Federighi
Affiliation:
department of Electronic and Electrical Engineering, University College London Torrington Place, London WC1E 7JE, England
A.J. Kenyon
Affiliation:
department of Electronic and Electrical Engineering, University College London Torrington Place, London WC1E 7JE, England
C.E. Chryssou
Affiliation:
department of Electronic and Electrical Engineering, University College London Torrington Place, London WC1E 7JE, England
C.W. Pitt
Affiliation:
department of Electronic and Electrical Engineering, University College London Torrington Place, London WC1E 7JE, England
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Abstract

We have studied the effect of level mixing on the optical properties of Er in Si by calculating the radiative cross sections of Er in Si under external pressure, and the possibility of enhancing in this way both the luminescence and the excitation efficiency.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 560: Symposium E – Luminescent Materials , 1999 , 251
Copyright
Copyright © Materials Research Society 1999

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References

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