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Deposition of Tin by Electron Cyclotron Resonance - Metal Organic Molecular Beam Epitaxy

Published online by Cambridge University Press:  22 February 2011

P. W. Wisk ,
C. R. Abernathy ,
S. J. Pearton ,
F. Ren ,
A. Katz  and
D. A. Bohling
P. W. Wisk
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
C. R. Abernathy
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
F. Ren
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
A. Katz
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
D. A. Bohling
Affiliation:
Air Products and Chemical Inc., Allentown, PA
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Abstract

We have investigated the feasibility of depositing TiN from nitrogen plasmas by Electron Cyclotron Resonance – Metal Organic Molecular Beam Epitaxy (ECR-MOMBE). Growth rate, index of refraction and resistivity were evaluated as a function of growth temperature and group V flow. It was found that TiN could be deposited at reasonable growth rates on either GaAs or Si substrates. However, the resistivity of the materia is quite high, >1700 µΩ-cm, probably because of significant carbon uptake into the layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 300: Symposium D1 – III-V Electronic and Photonic Device Fabrication and Performance , 1993 , 447
Copyright
Copyright © Materials Research Society 1993

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References

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