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Deformation Behavior of Strained Layer Heterostructures

Published online by Cambridge University Press:  21 February 2011

A. Fischer  and
H. KüHNE
A. Fischer
Affiliation:
Institute of Semiconductor Physics, Walter-Korsing-Straße 2, 15230 Frankfurt, Germany
H. KüHNE
Affiliation:
Institute of Semiconductor Physics, Walter-Korsing-Straße 2, 15230 Frankfurt, Germany
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Abstract

We present a new Volterra dislocation approach in equilibrium theory for strain relaxation in heteroepi-taxial semiconductor structures, one which includes surface relaxation effects and elastic interactions between straight misfit dislocations. The free-surface boundary conditions are satisfied by placing an image dislocation outside the crystal in such a manner that its stress field cancels that of the real interface misfit dislocation at the surface. The effect of the Airy stress function that removes the fictitious shear and normal stresses at the surface are discussed. This image method provides an equilibrium theory which correctly predicts critical strained layer thicknesses and completely describes the elastic and plastic strain relief as well as the phenomenon of work hardening in lattice mismatched epilayers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 399: Symposium D – Evolution of Epitaxial Structure and Morphology , 1995 , 377
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

1 Matthews, J. W. and Blakeslee, A. E., J. Cryst. Growth 27, 118 (1974) and 32, 265 (1976).Google Scholar
2 Dodson, B. W. and Tsao, J. Y., Appl. Phys. Lett. 51, 1325 (1987) and 52, 852 (1988).Google Scholar
3 Fischer, A., Kühne, H. and Richter, H., Phys. Rev. Lett. 73, 2712 (1994).Google Scholar
4 Fischer, A. and Richter, H., Appl. Phys. Lett. 64, 1218 (1994).Google Scholar
5 Osbourn, G. C., IEEE J. Quantum Electron. QE–22, 1677 (1986).Google Scholar
6 Houghton, D. C., Appl. Phys. Lett. 57, 1434 and 57, 2124 (1990).Google Scholar
7 Hull, R., Bean, J. C., Werder, D. J. and Leibenguth, R. E., Phys. Rev. B40, 1681 (1989).Google Scholar
8 Kasper, E., in Physics and Applications of Quantum Wells and Superlattices, E. E. Mendez and K. von Klitzing, Plenum Press, New York and London, 1987, p.101.Google Scholar
9 People, R. and Bean, J. C., Appl. Phys. Lett. 47, 322 (1985).Google Scholar
10 Hirth, J. P. and Lothe, J., Theory of Dislocations, McGraw-Hill, New York, 1968.Google Scholar
11 Willis, J. R., Jain, S. C. and Bullough, R., Appl. Phys. Lett. 59, 920 (1991).Google Scholar