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Damageless Magnetron Sputtering Deposition of SnO2:Sb Thin Films with Compensation Methods

Published online by Cambridge University Press:  15 February 2011

Sung Ho Shin ,
Kug-Hyun Song ,
Kwang Ja Park ,
Tadashi Ishida  and
Osamu Tabata
Sung Ho Shin
Affiliation:
Surface Finishing Laboratory, National Industrial Technology Institute 2 Joongang-dong, Kwacheon-city Kyeonggi-do, 427-010, Korea
Kug-Hyun Song
Affiliation:
Surface Finishing Laboratory, National Industrial Technology Institute 2 Joongang-dong, Kwacheon-city Kyeonggi-do, 427-010, Korea
Kwang Ja Park
Affiliation:
Surface Finishing Laboratory, National Industrial Technology Institute 2 Joongang-dong, Kwacheon-city Kyeonggi-do, 427-010, Korea
Tadashi Ishida
Affiliation:
Thin Film Engineering Laboratory, Material Physics Department, Osaka National Research Institute, 1-8-31 Midorigaoka, Ikeda, Osaka 563, Japan
Osamu Tabata
Affiliation:
Thin Film Laboratory, 5-210, 2-9-2, Fushiodai, Ikeda, Osaka 563, Japan
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Abstract

Phenomena and solving methods for damage of Sb-doped SbO2 thin films deposited by RF magnetron sputtering have been investigated by observing in the main the positional difference of film electrical resistivity. A ring plate mask was used to disperse the energetic particles and sputtering parameters were controlled such a manner that effects by the parameters were compensated each other. By the control, positional differences in resistivity and XRD patterns of the films could be reduced to a minimum value; The films became nearly uniform ones.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 403: Symposium I – Polycrystalline Thin Films: Structure, Texture, Properties and Applications II , 1995 , 423
Copyright
Copyright © Materials Research Society 1996

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