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Crystallization of Amorphous Silicon Films by Pulsed Ion Beam Annealing

Published online by Cambridge University Press:  15 February 2011

J. Gyulai ,
R. Fastow ,
K. Kavanagh ,
M. O. Thompson ,
C. J. Palmstrom ,
C. A. Hewett  and
J. W. Mayer
J. Gyulai
Affiliation:
Department of Materials ScienceCornell University, Ithaca, NY 14853
R. Fastow
Affiliation:
Department of Materials ScienceCornell University, Ithaca, NY 14853
K. Kavanagh
Affiliation:
Department of Materials ScienceCornell University, Ithaca, NY 14853
M. O. Thompson
Affiliation:
Department of Materials ScienceCornell University, Ithaca, NY 14853
C. J. Palmstrom
Affiliation:
Department of Materials ScienceCornell University, Ithaca, NY 14853
C. A. Hewett
Affiliation:
Department of Materials ScienceCornell University, Ithaca, NY 14853
J. W. Mayer
Affiliation:
Department of Materials ScienceCornell University, Ithaca, NY 14853
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Abstract

Regrowth by pulsed proton beam was studied for evaporated amorphous Si layers, for layers converted to polycrystalline by annealing (both with and without Ge markers) and for implantation-amorphized SOS films. Silicon-on-sapphire showed the lowest threshold for regrowth. Amorphous silicon melted at about 0.2 J/cm2 lower fluences of protons of 380 kev energy than crystalline Si. Implanted Sb into Sos occupies lattice positions exceeding the solid solubility.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 455
Copyright
Copyright © Materials Research Society 1983

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Footnotes

*

Permanent Address: Central Res. Inst. for Physics, H–1525 Budapest

**

Permanent Address: Dept. of Elec. Engineering, Univ. of California, San Diego, La Jolla, CA 92093

References

REFERENCES

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2.Chen, L. J., Hung, L. S., Mayer, J. W., Baglin, J. E. E., Neri, J. M., Hammer, D. A., Appl. Phys. Lett. 40, 595 (1982).Google Scholar
3.Neri, J. M., Hammer, D. A., Ginet, G., Sudan, R. N., Appl. Phys. Lett. 37, 101 (1980).Google Scholar
4.Fastow, R., Gyulai, J., Mayer, J. W.. This conference.Google Scholar