Published online by Cambridge University Press: 15 February 2011
Following a description of the purpose and participating members in the Phosphor Technology Center of Excellence, research on the growth and characterization of modulation doped ZnS:Mn and of Ca0.95Sr0.05Ga2S4:6%Ce are reported. ZnS:Mn has been grown using MOCVD and incorporation of Mn in 1 to 5 layers from 5 to 20 nm thick separated by layers of pure ZnS from 5 to 50 nm thick. This is shown to result in lower threshold voltages for ACTFELD displays. The luminescence spectra from sputter deposited, cerium-doped thiogallate thin films were measured and the diffusion of thin ZnS passivation layers versus temperature of heat treatment was discussed.