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Barrier Inhomogeneities Dominating Low-Frequency Excess Noise of Schottky Contacts

Published online by Cambridge University Press:  25 February 2011

Uwe Rau ,
Herbert H. Güttler  and
Jürgen H. Werner
Uwe Rau
Affiliation:
Max-Planck-Institut für Festkörperforschung, D-7000 Stuttgart 80, Germany
Herbert H. Güttler
Affiliation:
Max-Planck-Institut für Festkörperforschung, D-7000 Stuttgart 80, Germany
Jürgen H. Werner
Affiliation:
Max-Planck-Institut für Festkörperforschung, D-7000 Stuttgart 80, Germany
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Abstract

We introduce a new quantitative description for electronic noise at Schottky contacts. The model combines spatially inhomogeneous current transport across the interface with the modulation of the local barrier height due to trapping dynamics of charged states located at or close to the interface. The experimentally observed increase of noise power with decreasing temperature is explained by the inhomogeneity of the interface. Our model fits experimental data obtained from different silicide/silicon Schottky contacts and the detailed analysis of measured noise spectra yields information about the interfacial potential fluctuations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 305
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Hsu, S. T., IEEE Trans. Electr. Dev. ED-18, 882 (1971)CrossRefGoogle Scholar
[2] Luo, M. -Y., Bosman, G., van der Ziel, A., and Hench, L. L.. IEEE Trans. Electr. Dev. ED-35, 1351 (1988)CrossRefGoogle Scholar
[3] Gütter, H. H. and Werner, J. H., Appl. Phys. Lett. 56, 1113 (1990)CrossRefGoogle Scholar
[4] Sze, S., Physics of Semiconductor Devices (2nd Edition, John Wiley, New York, 1981), p. 258 Google Scholar
[5] Blasquez, G., in instabilities in Silicon Devices, Barbottin, G. and Vapaille, A., eds. (Elsevier Publishers B. V., North Holland, 1986), p. 389 Google Scholar
[6] Rau, U., Gütter, H. H., and Werner, J. H. (unpublished)Google Scholar
[7] Werner, J. H. and Gütter, H. H., J. Appl. Phys. 69, 1523 (1991)CrossRefGoogle Scholar
[8] Werner, J. H., Gütter, H. H., and Rau, U., these proceedingsGoogle Scholar
[9] Rau, U., Gütter, H. H., and Werner, J. H., these proceedingsGoogle Scholar