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Atomic Layer and Unit-Cell Layer Growth of (Ca,Sr)CuO2 and Bi2Sr2Can-1CunO2n+4 Thin Films by Laser Molecular Bean Epitaxy

Published online by Cambridge University Press:  16 February 2011

Masaki Kanai ,
Tomoji Kawai ,
Takuya Matsumoto  and
Shichio Kawai
Masaki Kanai
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University, 8-1, Mihogaoka. Ibaraki, Osaka 567, Japan
Tomoji Kawai
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University, 8-1, Mihogaoka. Ibaraki, Osaka 567, Japan
Takuya Matsumoto
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University, 8-1, Mihogaoka. Ibaraki, Osaka 567, Japan
Shichio Kawai
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University, 8-1, Mihogaoka. Ibaraki, Osaka 567, Japan
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Abstract

Thin films of (Ca,Sr)CuO2 and Bi2Sr2Can-1CunO2n+4 are formed by laser molecular beam epitaxy with in-situ reflection high energy electron diffraction observation. The diffraction pattern shows that these materials are formed with layer-by-layer growth. The change of the diffraction intensity as well as the analysis of the total diffraction pattern makes It possible to control the grown of the atomic layer or the unit-cell layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 222: Symposium D – Atomic Layer Growth and Processing , 1991 , 309
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1) Slegrist, T., Zahurak, S.M., Murphy, D.W. and Roth, R.S., Nature 334, 231 (1988).Google Scholar
2) Kanai, M., Kawai, T. and Kawal, S., Appl.Phys.Lett. 58, 771 (1991).Google Scholar
3) Shlom, D.G., Ecksteln, J.N., Bozovic, I., Chen, Z.J., Marshall, A.F., von Dessonneck, K.E. and Harris, J.S., SPIE proceeding, 1285, 234 (1990)CrossRefGoogle Scholar