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Antimony as A Passivant of Si(111) in the Si(111) (√3×√3)-Sb System

Published online by Cambridge University Press:  25 February 2011

A. Hughes ,
T-H. Shen  and
C.C. Matthai
A. Hughes
Affiliation:
Department of Physics, UWCC, P.O. Box 913, Cardiff, United Kingdom.
T-H. Shen
Affiliation:
Department of Physics, UWCC, P.O. Box 913, Cardiff, United Kingdom.
C.C. Matthai
Affiliation:
Department of Physics, UWCC, P.O. Box 913, Cardiff, United Kingdom.
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Abstract

The electronic density of states (DOS) for the Si(111) (√3×√3)-Sb system has been calculated using the tight binding method in the Extended Hiickel Approximation. We find that there is a gap of about 0.8eV between the valence band maximum (VBM) and a surface state. This is in contrast with the case of the unreconstructed (lxl) surface where the Fermi level lies at the surface state.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 505
Copyright
Copyright © Materials Research Society 1992

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References

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