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Above and below Bandgap Excitation of Er-defect Complexes and Isolated Er in Er-implanted GaN

Published online by Cambridge University Press:  01 February 2011

A. Braud ,
M. Abouzaid ,
M. Wojdak ,
J. L. Doualan ,
R. Moncorge ,
B. Pipeleers  and
A. Vantomme
A. Braud
Affiliation:
CIRIL – ISMRA, 6 Boulevard maréchal Juin, 14050 Caen cedex, France
M. Abouzaid
Affiliation:
CIRIL – ISMRA, 6 Boulevard maréchal Juin, 14050 Caen cedex, France
M. Wojdak
Affiliation:
CIRIL – ISMRA, 6 Boulevard maréchal Juin, 14050 Caen cedex, France
J. L. Doualan
Affiliation:
CIRIL – ISMRA, 6 Boulevard maréchal Juin, 14050 Caen cedex, France
R. Moncorge
Affiliation:
CIRIL – ISMRA, 6 Boulevard maréchal Juin, 14050 Caen cedex, France
B. Pipeleers
Affiliation:
Instituut voor Kern-en Stralingsfysica, Departement Natuurkunde, Celestijnenlaan 200 D, 3001 LEUVEN, Belgium
A. Vantomme
Affiliation:
Instituut voor Kern-en Stralingsfysica, Departement Natuurkunde, Celestijnenlaan 200 D, 3001 LEUVEN, Belgium
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Abstract

Photoluminescence (PL) spectra, luminescence dynamics and luminescence saturation of the Er3+4I13/2 → 4I15/2 transition in Er-implanted GaN samples at 7K are investigated. Under below-gap excitation, different Er centers are identified. Several Er centers are clearly excited via local defects or impurities. Er-defect complexes excited by above or below bandgap light are compared. Luminescence dynamics study shows that the 4I13/2 manifold has a shorter lifetime when Er ions are part of Er-defect complexes than when Er ions are isolated from any defect. The saturation of Er luminescence is investigated for the different types of Er center corresponding to specific excitation wavelengths.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y8.3
Copyright
Copyright © Materials Research Society 2004

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References

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